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Volume 25
Issue 17
10.3390/s25175571
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance

by
Jairo Villegas
1,2,*,
Florent Dougados
2,
Carmen Torres
1,
Pablo Fernandez-Martinez
2,
María del Carmen Jiménez-Ramos
1,3 and
Salvador Hidalgo
2
1
Centro Nacional de Aceleradores (U. Sevilla, CSIC, J. de Andalucia), 41092 Sevilla, Spain
2
Instituto de Microelectrónica de Barcelona (IMB-CNM, CSIC), Universitat Autònoma de Barcelona, 08193 Barcelona, Spain
3
Departamento de Física Aplicada II, Universidad de Sevilla, 41012 Sevilla, Spain
*
Author to whom correspondence should be addressed.
Sensors 2025, 25(17), 5571; https://doi.org/10.3390/s25175571 (registering DOI)
Submission received: 4 August 2025 / Revised: 27 August 2025 / Accepted: 3 September 2025 / Published: 6 September 2025
(This article belongs to the Special Issue Advances in Radiation Sensors and Detectors)
Versions Notes

Abstract

Over the past few years, Low-Gain Avalanche Detectors (LGADs) have demonstrated excellent timing performance, showing great potential for use in 4D tracking of high-energy charged particles. Carbon co-doping is a key factor for enhancing LGAD performance, which are detectors with intrinsic amplification, in harsh radiation environments. This work presents a broad pre-irradiation characterization of the latest carbon-co-implanted (or carbonated) LGADs fabricated at IMB-CNM. The results indicate that the addition of carbon reduces the nominal gain of the devices compared with non-carbonated detectors. Furthermore, a comprehensive study is presented on how carbon co-implantation can either enhance or suppress the diffusion of the multiplication layer during LGAD fabrication, depending on the device structure and fabrication parameters.
Keywords: LGAD; X-rays and charged-particle detectors; alpha spectrometry; dopant diffusion in silicon LGAD; X-rays and charged-particle detectors; alpha spectrometry; dopant diffusion in silicon

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MDPI and ACS Style

Villegas, J.; Dougados, F.; Torres, C.; Fernandez-Martinez, P.; Jiménez-Ramos, M.d.C.; Hidalgo, S. The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance. Sensors 2025, 25, 5571. https://doi.org/10.3390/s25175571

AMA Style

Villegas J, Dougados F, Torres C, Fernandez-Martinez P, Jiménez-Ramos MdC, Hidalgo S. The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance. Sensors. 2025; 25(17):5571. https://doi.org/10.3390/s25175571

Chicago/Turabian Style

Villegas, Jairo, Florent Dougados, Carmen Torres, Pablo Fernandez-Martinez, María del Carmen Jiménez-Ramos, and Salvador Hidalgo. 2025. "The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance" Sensors 25, no. 17: 5571. https://doi.org/10.3390/s25175571

APA Style

Villegas, J., Dougados, F., Torres, C., Fernandez-Martinez, P., Jiménez-Ramos, M. d. C., & Hidalgo, S. (2025). The Effects of High-Energy Carbon Co-Doping on IMB-CNM LGAD Fabrication and Performance. Sensors, 25(17), 5571. https://doi.org/10.3390/s25175571

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