Characterization of Instrument Transformers under Realistic Conditions: Impact of Single and Combined Influence Quantities on Their Wideband Behavior
Abstract
:1. Introduction
- i.
- The definition of the accuracy and uncertainty limits of ITs in PQ measurements, functional to the establishment of “PQ Accuracy Classes” as an extension of the power frequency accuracy class concept of ITs to the frequency range up to 9 kHz. To this end, significant test waveforms and suitable performance indices for PQ parameters have been defined and experimented, as detailed in [35].
- ii.
- The development of missing reference measurement systems and related test procedures and methodologies to evaluate the relevant uncertainty contribution of ITs to PQ indices, to ensure the traceability and accuracy of the measurement results provided of ITs in the wideband measurement of PQ disturbances. On this subject, reference systems for the laboratory frequency characterization of VT/LPVT and CT/LPCT have been developed starting from previous experience. An example of a realized setup and its characterization is given in [16].
- iii.
- The implementation of simplified IT test procedures, which can be easily adopted by test laboratories that operate in an industrial environment. To this end, simplified but accurate procedures to characterize wideband ITs have been studied and validated by comparison with the reference ones as implemented by NMIs. An example of a procedure for VTs’ wideband characterization that makes use of measurement instrumentation commonly used in industrial laboratories is described in [36].
- iv.
- The evaluation of ITs’ performance under realistic conditions, including the impact of the simultaneous presence of different influence quantities. The adopted procedure, systems, and findings of the activity carried out on this last topic are the subject of the present paper, as described in the following sections, considering the previously mentioned influence quantities.
2. Measurement Procedures and Setups
2.1. Influence of Temperature and Vibration on VTs
2.1.1. Introduction
2.1.2. Measurement Setup
2.1.3. Test Procedure
- A.
- VT performance assessment under separate temperature and vibration
- a.
- Setup of the shaker at Z axis.
- b.
- Measurement of the VT PIs at fundamental frequency without vibration for all three temperatures (−25 °C, 23 °C, and 55 °C).
- c.
- Measurement of the VT PIs under vibration for all three temperatures (−25 °C, 23 °C, and 55 °C), all vibration frequencies (3 Hz, 20 Hz, 100 Hz, and 150 Hz), and all accelerations (0.1 g, 0.3 g, and 0.5 g).
- d.
- Setup of the shaker at X axis.
- e.
- Measurement of the VT PIs in the absence of vibration at 23 °C.
- f.
- Measurement of the VT PIs at 23 °C under vibration for all vibration frequencies (3 Hz, 20 Hz, 100 Hz, and 150 Hz) and all accelerations (0.1 g, 0.3 g, and 0.5 g).
- g.
- Setup of the shaker at the Y axis and at 23 °C.
- h.
- Measurement of the VT PIs without vibration at 23 °C.
- i.
- Measurement of the VT PIs at 23 °C under vibration for all vibration frequencies (3 Hz, 20 Hz, 100 Hz, and 150 Hz) and all accelerations (0.1 g, 0.3 g, and 0.5 g).
- B.
- Assessment of VT frequency response under temperature and vibration conditions.
- a.
- Setup of the shaker at the Z axis.
- b.
- Measurement of the VT’s frequency response without vibration for all three temperatures.
- c.
- Measurement of the frequency response of the VT under vibration for all three temperatures (−25 °C, 23 °C, and 55 °C) under vibration frequencies of 20 Hz and 100 Hz at 0.5 g acceleration.
2.2. Influence of Temperature and Burden on VTs
2.2.1. Generation and Measurement Setup
2.2.2. Test Procedure
2.3. Influence of Adjacent Phases and Proximity on VTs and LPVTs
2.3.1. Generation and Measurement Setup
2.3.2. Test Procedures
- Adjacent Phase Test
- Proximity Effect
- Combined Effect of Adjacent Phases and Proximity
2.4. Effects of Adjacent Phase and Proximity on LPCTs and CTs
- Primary conductor centering;
- The position of the CT connector;
- The distance d between the primary conductor through the DUT and its return conductor;
- Test repeatability/random.
2.5. Adjacent Phases and Proximity Effect on LP Combined Sensors
2.5.1. Generation and Measurement Setup
2.5.2. Test Parameters and Procedures
3. Experimental Results: Effect of Single Influence Quantity
3.1. Temperature (VTs)
3.2. Vibration (VT)
3.3. Burden (VT)
3.4. Adjacent Phases
3.4.1. VT/LPVTs
3.4.2. LP Combined Sensors (RCs)
3.5. Proximity
3.5.1. VT/LPVTs
3.5.2. LP Combined Sensors (RCs)
4. Experimental Results: Effect of Multiple Influence Quantities
4.1. Temperature and Vibration
4.2. Temperature and Burden
4.3. Adjacent Phases and Proximity
4.3.1. LPVTs and VTs
- R-LPVT
- C-LPVT
- RC-LPVT
- VT
4.3.2. LPCTs and CTs
4.3.3. LP Combined Sensors (RCs)
5. Discussion of the Experimental Results
5.1. Temperature and Vibration
5.2. Temperature and Burden
5.3. Adjacent Phases and Proximity
5.3.1. VTs and LPVTs
5.3.2. CTs and LPCTs
5.3.3. LP Combined CT Sensors
6. Conclusions
Author Contributions
Funding
Conflicts of Interest
Abbreviations
Abbreviation/Acronym | Definition |
AC | Alternate Current |
ADC | Analogue-to-Digital Converter |
AWG: | Arbitrary Waveform Generator |
C-LPVT | Capacitive Low-Power Voltage Transformer |
CT | Current Transformer |
DAC | Digital-to-Analogue Converter |
DAQ | Data Acquisition |
DUT | Device Under Test |
FH1 | Fundamental Tone Plus 1 Harmonic Tone Waveform |
HV | High Voltage |
IT | Instrument Transformer |
ITPA | Inductive Transconductance Power Amplifier |
IVPA | Inductive Voltage Power Amplifier |
LP | Low Power |
LPCT | Low-Power Current Transformer |
LPVT | Low-Power Voltage Transformer |
LV | Low Voltage |
LVMS | Low-Voltage Measuring System |
MV | Medium Voltage |
NMI | National Metrology Institute |
PI | Performance Index |
PQ | Power Quality |
PXI | PCI eXtension for Instrumentation |
RC | Rogowski Coil |
RCVD | Resistive–Capacitive Voltage Divider |
R-LPVT | Resistive Low-Power Voltage Transformer |
RC-LPVT | Resistive–Capacitive Low-Power Voltage Transformer |
UUT | Unit Under Test |
VT | Voltage Transformer |
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Name and photo of the investigated VT | VT A | VT B | VT C | VT D | |
Rated primary voltage | (kV) | 20/√3 | 20/√3 | 35/√3 | 10/√3 |
Rated secondary voltage | (V) | 100/√3 | 100/√3 | 100/√3 | 100/√3 |
Rated frequency | (Hz) | 50 | 50 | 50 | 50 |
Rated burden | (VA) | 50 | 50 | 50 | 30 |
Accuracy class | 0.5 | 0.5 | 0.5 | 0.5 | |
Thermal time constant | (h) | 2.4 | 2.2 | 2.1 | 1.6 |
Name of the DUT | Type | Primary Voltage (kV) | Rated Scale Factor (V/V) | Accuracy Class |
---|---|---|---|---|
R-LPVT | Resistive divider | 20/√3 | 6153.8 | 0.5 |
C-LPVT | Capacitive divider | 20/√3 | 20/√3 | 0.5 |
RC-LPVT | Resistive–capacitive divider | 45 | 10,000 | 0.2 |
VT | Inductive VT | 20/√3 | 200 | 0.5 |
(-) | (%) |
---|---|
2 | 2 |
3 | 5 |
5 | 6 |
7 | 5 |
17 | 2 |
25 | 2 |
50 | 0.5 |
82 | 0.5 |
115 | 0.5 |
148 | 0.5 |
180 | 0.5 |
Main Features of the DUT | Inductive CT | Rogowski Coil | |
---|---|---|---|
Name | CT I | CT II | CT III |
Primary current | 400 A | 500 A | 1000 A |
Output | 1 A | 1 A | 22.5 mV |
Transformation ratio | 1:400 A/A | 1:500 A/A | - |
Rated burden | 5 VA | 2.5 VA | 10 kΩ |
Accuracy class | Cl. 0.2S | Cl. 0.5 | Cl. 0.5 |
1 | UUT-LP Combined Sensor (RC): Sensor UUT is tested as a standalone device by applying a multitone (FH1) test signal. | |
2 | Adjacent Phases (in-phase supply): Sensor UUT is placed in the middle (B) between sensors A and C, which are energized with the same fundamental tone as Sensor UUT, but without harmonics. | |
3 | Adjacent Phases (three-phase supply): Sensors A and C are energized with ±120° phase differences from UUT. | |
4 | Adjacent Phases (in-phase supply): Sensor UUT is replaced by Sensor C, while Sensors A and C are energized with the same phase as Sensor UUT | |
5 | Proximity (return cable alignment): The primary current conductor is aligned 90° downwards with a distance of 20 cm from the central axes. | |
6 | Combined (adjacent phases and proximity): Arrangements 4 and 5 are placed together. (Figure is for demonstration only). Sensors are aligned as in previous arrangements. |
Frequency (Hz) | εadjacent-phases (%) | εprox (%) | εcomb (%) |
---|---|---|---|
150 | −0.87 | −0.93 | −0.74 |
850 | 0.16 | −0.68 | 2.58 |
1250 | 0.82 | −0.24 | 4.20 |
2500 | 2.25 | 0.90 | 6.65 |
Frequency (Hz) | εadjacent-phases (%) | εprox (%) | εcomb (%) |
---|---|---|---|
100 | 0.92 | 0.69 | 0.88 |
350 | 1.33 | 1.12 | 1.30 |
1250 | 1.02 | 0.82 | 1.00 |
9000 | −0.87 | −1.02 | −0.89 |
Frequency (Hz) | εadjacent-phases (%) | εprox (%) | εadjacent-phases + εprox (%) | εcomb (%) | εcomb- (εadjacent-phases + εprox) |
---|---|---|---|---|---|
50 | 1.08 | −0.17 | 0.91 | 0.84 | −0.07 |
350 | 3.66 | −1.96 | 1.70 | 2.60 | 0.90 |
9000 | 3.88 | −1.62 | 2.26 | 2.83 | 0.57 |
Frequency (Hz) | εadjacent-phases (%) | εprox (%) | εcomb (%) |
---|---|---|---|
150 | 0.31 | 0.32 | 0.31 |
850 | 0.13 | 0.15 | 0.15 |
1250 | −0.26 | −0.25 | −0.24 |
2500 | −2.49 | −2.45 | −2.44 |
Position | CT II | CT III | ||
---|---|---|---|---|
Δε (%) | Δφ (crad) | Δε (%) | Δφ (crad) | |
(1) | 0.04 | 0.02 | 0.99 | 0.01 |
(2) | 0.01 | 0 | 0.09 | 0 |
(3) | 0.01 | 0 | 0.02 | 0 |
(4) | 0.02 | 0.03 | 0.16 | 0 |
CT I | CT II | CT III (Uout = 0.25 V) | CT III (Uout = 2.75 V) | |
---|---|---|---|---|
Δ|E| in ppm | Δ|E| in % | Δ|E| in % | Δ|E| in % | |
(2) | 8 | 0.03 | 0.19 | 0.15 |
(3) | 1 | 0.01 | 0.01 | 0.01 |
|E|max in ppm | |E|max in % | |E|max in % | |E|max in % | |
(4) | 2 | 0.009 | 0.019 | 0.016 |
DUT | Temperature | Vibration | Combined |
---|---|---|---|
Inductive VT | High impact, most critical situation at lowest temperature (−25 °C) and frequencies close to the resonance | No impact | No impact of vibration |
Burden | Combined | ||
High impact | Burden impact decreases with rising temperature, most critical situation at −25 °C |
DUT | Adjacent Phases | Proximity | Combined |
---|---|---|---|
R-LPVT | Medium impact | Medium impact | High impact, Combined error higher than the sum of single influence parameter errors |
C-LPVT | Low impact | No impact | No impact of proximity |
RC-LPVT | Medium impact | High impact | High impact. Possible to assume a direct sum of the two influence quantities (error associated with the sum of the effects < 1% up to 9 kHz) |
Inductive VT | No impact | No impact | No impact |
DUT | Adjacent Phases | Proximity | Combined |
---|---|---|---|
RC (alone and as part of combined sensor) | High impact (for power frequency errors only) | Medium impact | Higher impact, error higher than the sum of the single influence parameters |
Inductive CT | Low impact | Low impact | Medium impact |
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Letizia, P.S.; Crotti, G.; Mingotti, A.; Tinarelli, R.; Chen, Y.; Mohns, E.; Agazar, M.; Istrate, D.; Ayhan, B.; Çayci, H.; et al. Characterization of Instrument Transformers under Realistic Conditions: Impact of Single and Combined Influence Quantities on Their Wideband Behavior. Sensors 2023, 23, 7833. https://doi.org/10.3390/s23187833
Letizia PS, Crotti G, Mingotti A, Tinarelli R, Chen Y, Mohns E, Agazar M, Istrate D, Ayhan B, Çayci H, et al. Characterization of Instrument Transformers under Realistic Conditions: Impact of Single and Combined Influence Quantities on Their Wideband Behavior. Sensors. 2023; 23(18):7833. https://doi.org/10.3390/s23187833
Chicago/Turabian StyleLetizia, Palma Sara, Gabriella Crotti, Alessandro Mingotti, Roberto Tinarelli, Yeying Chen, Enrico Mohns, Mohamed Agazar, Daniela Istrate, Burak Ayhan, Hüseyin Çayci, and et al. 2023. "Characterization of Instrument Transformers under Realistic Conditions: Impact of Single and Combined Influence Quantities on Their Wideband Behavior" Sensors 23, no. 18: 7833. https://doi.org/10.3390/s23187833
APA StyleLetizia, P. S., Crotti, G., Mingotti, A., Tinarelli, R., Chen, Y., Mohns, E., Agazar, M., Istrate, D., Ayhan, B., Çayci, H., & Stiegler, R. (2023). Characterization of Instrument Transformers under Realistic Conditions: Impact of Single and Combined Influence Quantities on Their Wideband Behavior. Sensors, 23(18), 7833. https://doi.org/10.3390/s23187833