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Paz-Martínez G, Íñiguez-de-la-Torre I, Sánchez-Martín H, Novoa-López JA, Hoel V, Cordier Y, Mateos J, González T. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs. Sensors. 2022; 22(4):1515. https://doi.org/10.3390/s22041515

Paz-Martínez, Gaudencio, Ignacio Íñiguez-de-la-Torre, Héctor Sánchez-Martín, José Antonio Novoa-López, Virginie Hoel, Yvon Cordier, Javier Mateos, and Tomás González. 2022. "Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs" Sensors 22, no. 4: 1515. https://doi.org/10.3390/s22041515

Paz-Martínez, G., Íñiguez-de-la-Torre, I., Sánchez-Martín, H., Novoa-López, J. A., Hoel, V., Cordier, Y., Mateos, J., & González, T. (2022). Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs. Sensors, 22(4), 1515. https://doi.org/10.3390/s22041515