Paz-Martínez, G.; Íñiguez-de-la-Torre, I.; Sánchez-Martín, H.; Novoa-López, J.A.; Hoel, V.; Cordier, Y.; Mateos, J.; González, T.
Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs. Sensors 2022, 22, 1515.
https://doi.org/10.3390/s22041515
AMA Style
Paz-Martínez G, Íñiguez-de-la-Torre I, Sánchez-Martín H, Novoa-López JA, Hoel V, Cordier Y, Mateos J, González T.
Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs. Sensors. 2022; 22(4):1515.
https://doi.org/10.3390/s22041515
Chicago/Turabian Style
Paz-Martínez, Gaudencio, Ignacio Íñiguez-de-la-Torre, Héctor Sánchez-Martín, José Antonio Novoa-López, Virginie Hoel, Yvon Cordier, Javier Mateos, and Tomás González.
2022. "Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs" Sensors 22, no. 4: 1515.
https://doi.org/10.3390/s22041515
APA Style
Paz-Martínez, G., Íñiguez-de-la-Torre, I., Sánchez-Martín, H., Novoa-López, J. A., Hoel, V., Cordier, Y., Mateos, J., & González, T.
(2022). Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs. Sensors, 22(4), 1515.
https://doi.org/10.3390/s22041515