Article Versions Notes

Zhang H, Tian Y, Li Q, Ding W, Yu X, Lin Z, Feng X, Zhao Y. Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm. Sensors. 2022; 22(20):7724. https://doi.org/10.3390/s22207724

Zhang, Hewei, Yang Tian, Qian Li, Wenqiang Ding, Xuzhen Yu, Zebiao Lin, Xuyang Feng, and Yanli Zhao. 2022. "Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm" Sensors 22, no. 20: 7724. https://doi.org/10.3390/s22207724

Zhang, H., Tian, Y., Li, Q., Ding, W., Yu, X., Lin, Z., Feng, X., & Zhao, Y. (2022). Photon-Trapping Microstructure for InGaAs/Si Avalanche Photodiodes Operating at 1.31 μm. Sensors, 22(20), 7724. https://doi.org/10.3390/s22207724