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Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4

Engineering Department, Lancaster University, Lancaster LA1 4YW, UK
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Author to whom correspondence should be addressed.
Academic Editor: Olga Korostynska
Sensors 2021, 21(23), 7930; https://doi.org/10.3390/s21237930
Received: 10 November 2021 / Revised: 23 November 2021 / Accepted: 24 November 2021 / Published: 27 November 2021
(This article belongs to the Section Physical Sensors)
Third-generation semiconductor materials have a wide band gap, high thermal conductivity, high chemical stability and strong radiation resistance. These materials have broad application prospects in optoelectronics, high-temperature and high-power equipment and radiation detectors. In this work, thin-film solid state neutron detectors made of four third-generation semiconductor materials are studied. Geant4 10.7 was used to analyze and optimize detectors. The optimal thicknesses required to achieve the highest detection efficiency for the four materials are studied. The optimized materials include diamond, silicon carbide (SiC), gallium oxide (Ga2O3) and gallium nitride (GaN), and the converter layer materials are boron carbide (B4C) and lithium fluoride (LiF) with a natural enrichment of boron and lithium. With optimal thickness, the primary knock-on atom (PKA) energy spectrum and displacements per atom (DPA) are studied to provide an indication of the radiation hardness of the four materials. The gamma rejection capabilities and electron collection efficiency (ECE) of these materials have also been studied. This work will contribute to manufacturing radiation-resistant, high-temperature-resistant and fast response neutron detectors. It will facilitate reactor monitoring, high-energy physics experiments and nuclear fusion research. View Full-Text
Keywords: interaction of radiation with matter; neutron detection; semiconductor; charge collection efficiency; radiation-hard detectors; Geant4; Monte Carlo simulation interaction of radiation with matter; neutron detection; semiconductor; charge collection efficiency; radiation-hard detectors; Geant4; Monte Carlo simulation
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MDPI and ACS Style

Zhang, Z.; Aspinall, M.D. Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4. Sensors 2021, 21, 7930. https://doi.org/10.3390/s21237930

AMA Style

Zhang Z, Aspinall MD. Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4. Sensors. 2021; 21(23):7930. https://doi.org/10.3390/s21237930

Chicago/Turabian Style

Zhang, Zhongming, and Michael D. Aspinall. 2021. "Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4" Sensors 21, no. 23: 7930. https://doi.org/10.3390/s21237930

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