Anbinderis, M.; Ašmontas, S.; Čerškus, A.; Gradauskas, J.; Lučun, A.; Šilėnas, A.; Sužiedėlis, A.
Sensitive Planar Microwave Diode on the Base of Ternary AlxGa1-xAs Semiconductor Compound. Sensors 2021, 21, 4487.
https://doi.org/10.3390/s21134487
AMA Style
Anbinderis M, Ašmontas S, Čerškus A, Gradauskas J, Lučun A, Šilėnas A, Sužiedėlis A.
Sensitive Planar Microwave Diode on the Base of Ternary AlxGa1-xAs Semiconductor Compound. Sensors. 2021; 21(13):4487.
https://doi.org/10.3390/s21134487
Chicago/Turabian Style
Anbinderis, Maksimas, Steponas Ašmontas, Aurimas Čerškus, Jonas Gradauskas, Andžej Lučun, Aldis Šilėnas, and Algirdas Sužiedėlis.
2021. "Sensitive Planar Microwave Diode on the Base of Ternary AlxGa1-xAs Semiconductor Compound" Sensors 21, no. 13: 4487.
https://doi.org/10.3390/s21134487
APA Style
Anbinderis, M., Ašmontas, S., Čerškus, A., Gradauskas, J., Lučun, A., Šilėnas, A., & Sužiedėlis, A.
(2021). Sensitive Planar Microwave Diode on the Base of Ternary AlxGa1-xAs Semiconductor Compound. Sensors, 21(13), 4487.
https://doi.org/10.3390/s21134487