Doyen, C.; Ricq, S.; Magnan, P.; Marcelot, O.; Barlas, M.; Place, S.
Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process. Sensors 2020, 20, 287.
https://doi.org/10.3390/s20010287
AMA Style
Doyen C, Ricq S, Magnan P, Marcelot O, Barlas M, Place S.
Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process. Sensors. 2020; 20(1):287.
https://doi.org/10.3390/s20010287
Chicago/Turabian Style
Doyen, Célestin, Stéphane Ricq, Pierre Magnan, Olivier Marcelot, Marios Barlas, and Sébastien Place.
2020. "Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process" Sensors 20, no. 1: 287.
https://doi.org/10.3390/s20010287
APA Style
Doyen, C., Ricq, S., Magnan, P., Marcelot, O., Barlas, M., & Place, S.
(2020). Electrical Characterization of the Backside Interface on BSI Global Shutter Pixels with Tungsten-Shield Test Structures on CDTI Process. Sensors, 20(1), 287.
https://doi.org/10.3390/s20010287