Next Article in Journal
Background and Recent Advances in the Locata Terrestrial Positioning and Timing Technology
Previous Article in Journal
Basic MAC Scheme for RF Energy Harvesting Wireless Sensor Networks: Throughput Analysis and Optimization
Previous Article in Special Issue
Plasmonic Color Filter Array with High Color Purity for CMOS Image Sensors
Article Menu

Article Versions

Export Article

Open AccessArticle
Sensors 2019, 19(8), 1823; https://doi.org/10.3390/s19081823

Effects of Offset Pixel Aperture Width on the Performances of Monochrome CMOS Image Sensors for Depth Extraction

1
School of Electronics Engineering, Kyungpook National University, 80 Deahak-ro, Buk-gu, Daegu 41566, Korea
2
Center for Integrated Smart Sensors, KAIST, 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea
*
Author to whom correspondence should be addressed.
Received: 28 February 2019 / Revised: 11 April 2019 / Accepted: 14 April 2019 / Published: 16 April 2019
(This article belongs to the Special Issue Advanced CMOS Image Sensors and Emerging Applications)
PDF [730 KB, uploaded 16 April 2019]

Abstract

This paper presents the effects of offset pixel aperture width on the performance of monochrome (MONO) CMOS image sensors (CISs) for a three-dimensional image sensor. Using a technique to integrate the offset pixel aperture (OPA) inside each pixel, the depth information can be acquired using a disparity from OPA patterns. The OPA is classified into two pattern types: Left-offset pixel aperture (LOPA) and right-offset pixel aperture (ROPA). These OPAs are divided into odd and even rows and integrated in a pixel array. To analyze the correlation between the OPA width and the sensor characteristics, experiments were conducted by configuring the test elements group (TEG) regions. The OPA width of the TEG region for the measurement varied in the range of 0.3–0.5 μm. As the aperture width decreased, the disparity of the image increased, while the sensitivity decreased. It is possible to acquire depth information by the disparity obtained from the proposed MONO CIS using the OPA technique without an external light source. Therefore, the proposed MONO CIS with OPA could easily be applied to miniaturized devices. The proposed MONO CIS was designed and manufactured using the 0.11 μm CIS process.
Keywords: offset pixel aperture width; monochrome; CMOS image sensor; depth extraction offset pixel aperture width; monochrome; CMOS image sensor; depth extraction
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Lee, J.; Choi, B.-S.; Kim, S.-H.; Lee, J.; Lee, J.; Chang, S.; Park, J.; Lee, S.-J.; Shin, J.-K. Effects of Offset Pixel Aperture Width on the Performances of Monochrome CMOS Image Sensors for Depth Extraction. Sensors 2019, 19, 1823.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top