High-Sensitivity Pixels with a Quad-WRGB Color Filter and Spatial Deep-Trench Isolation
Department of Electronics Engineering, Dong-A University, Busan 49315, Korea
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Author to whom correspondence should be addressed.
Sensors 2019, 19(21), 4653; https://doi.org/10.3390/s19214653
Received: 2 September 2019
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Revised: 22 October 2019
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Accepted: 24 October 2019
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Published: 26 October 2019
(This article belongs to the Section Optical Sensors)
The demand for a high-resolution metal-oxide-semiconductor (CMOS) image sensor has increased in recent years, and pixel size has shrunk below 1.0 μm to allow accumulation of numerous pixels in a limited area. However, shrinking the pixel size lowers the sensitivity and increases crosstalk because the aspect ratio is worsened by maintaining the height of the pixel. This work introduces a high-sensitivity pixel with a quad-WRGB (White, Red, Green, Blue) color filter array (CFA), spatial deep-trench isolation (S-DTI), and a spatial tungsten grid (S-WG). The optical performance of the suggested pixel was analyzed by performing 3D optical simulations at 1.0, 0.9, and 0.8 μm pixel pitches as small-sized pixels. The quad-WRGB CFA is compared with the quad-Bayer CFA, and the S-DTI and S-WG are compared with the conventional DTI and WG. We confirmed an improvement in the sensitivity of the suggested pixel using the quad-WRGB CFA with S-DTI and S-WG to a maximum of 58.2%, 67.0%, and 66.3% for 1.0, 0.9, and 0.8 μm pixels, respectively.
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Keywords:
quad-WRGB; spatial-DTI; CMOS image sensor
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MDPI and ACS Style
Kim, Y.; Kim, Y. High-Sensitivity Pixels with a Quad-WRGB Color Filter and Spatial Deep-Trench Isolation. Sensors 2019, 19, 4653. https://doi.org/10.3390/s19214653
AMA Style
Kim Y, Kim Y. High-Sensitivity Pixels with a Quad-WRGB Color Filter and Spatial Deep-Trench Isolation. Sensors. 2019; 19(21):4653. https://doi.org/10.3390/s19214653
Chicago/Turabian StyleKim, Yongnam, and Yunkyung Kim. 2019. "High-Sensitivity Pixels with a Quad-WRGB Color Filter and Spatial Deep-Trench Isolation" Sensors 19, no. 21: 4653. https://doi.org/10.3390/s19214653
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