Article Versions Notes

Liu J-J, Ho W-J, Chen J-Y, Lin J-N, Teng C-J, Yu C-C, Li Y-C, Chang M-J. The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation. Sensors. 2019; 19(15):3399. https://doi.org/10.3390/s19153399

Liu, Jheng-Jie, Wen-Jeng Ho, June-Yan Chen, Jian-Nan Lin, Chi-Jen Teng, Chia-Chun Yu, Yen-Chu Li, and Ming-Jui Chang. 2019. "The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation" Sensors 19, no. 15: 3399. https://doi.org/10.3390/s19153399

Liu, J.-J., Ho, W.-J., Chen, J.-Y., Lin, J.-N., Teng, C.-J., Yu, C.-C., Li, Y.-C., & Chang, M.-J. (2019). The Fabrication and Characterization of InAlAs/InGaAs APDs Based on a Mesa-Structure with Polyimide Passivation. Sensors, 19(15), 3399. https://doi.org/10.3390/s19153399