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Sensors 2018, 18(6), 1914; https://doi.org/10.3390/s18061914

Transilient Response to Acetone Gas Using the Interlocking p+n Field-Effect Transistor Circuit

1
State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, China
2
College of Chemical Engineering, University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing 100049, China
3
Center for Excellence in Regional Atmospheric Environment, Institute of Urban Environment, Chinese Academy of Sciences, Xiamen 361021, China
4
College of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China
*
Authors to whom correspondence should be addressed.
Received: 7 May 2018 / Revised: 4 June 2018 / Accepted: 5 June 2018 / Published: 12 June 2018
(This article belongs to the Section Chemical Sensors)
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Abstract

Low concentration acetone gas detection is significantly important for diabetes diagnosis as 1.8–10 ppm of acetone exists in exhaled breath from diabetes patients. A new interlocking p+n field-effect transistor (FET) circuit has been proposed for Mn-doped ZnO nanoparticles (MZO) to detect the acetone gas at low concentration, especially close to 1.8 ppm. It is noteworthy that MZO in this interlocking amplification circuit shows a low voltage signal of <0.3 V to the acetone <2 ppm while it displays a transilient response with voltage signal >4.0 V to >2 ppm acetone. In other words, the response to acetone from 1 ppm to 2 ppm increases by ~1233%, which is competent to separate diabetic patients from healthy people. Moreover, the response to 2 ppm acetone is hardly influenced by high relative humidity of 85%. In the meanwhile, MZO in this interlocking circuit possesses a high acetone selectivity compared to formaldehyde, acetaldehyde, toluene and ethanol, suggesting a promising technology for the widespread qualitative screening of diabetes. Importantly, this interlocking circuit is also applicable to other types of metal oxide semiconductor gas sensors. The resistance jump of p- and n-FETs induced by the change of their gate voltages is deemed to make this interlocking circuit produce the transilient response. View Full-Text
Keywords: Mn-doped ZnO; transilient response; field-effect transistor; diabetes; metal oxide semiconductor sensor Mn-doped ZnO; transilient response; field-effect transistor; diabetes; metal oxide semiconductor sensor
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Zhou, X.; Wang, J.; Wang, Z.; Bian, Y.; Wang, Y.; Han, N.; Chen, Y. Transilient Response to Acetone Gas Using the Interlocking p+n Field-Effect Transistor Circuit. Sensors 2018, 18, 1914.

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