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Open AccessArticle

Design and Fabrication of Full Wheatstone-Bridge-Based Angular GMR Sensors

Fert Beijing Institute, BDBC, School of Electronic and Information Engineering, Beihang University, Beijing 100191, China
Beihang-Goertek Joint Microelectronics Institute, Qingdao Research Institute, Beihang University, Qingdao 266000, China
State Key Laboratory of Virtual Reality Technology and Systems, Beihang University, Beijing 100191, China
Goertek Inc., Weifang 261031, China
Authors to whom correspondence should be addressed.
Sensors 2018, 18(6), 1832;
Received: 28 April 2018 / Revised: 24 May 2018 / Accepted: 1 June 2018 / Published: 5 June 2018
(This article belongs to the Special Issue Magnetic Sensors)
Since the discovery of the giant magnetoresistive (GMR) effect, GMR sensors have gained much attention in last decades due to their high sensitivity, small size, and low cost. The full Wheatstone-bridge-based GMR sensor is most useful in terms of the application point of view. However, its manufacturing process is usually complex. In this paper, we present an efficient and concise approach to fabricate a full Wheatstone-bridge-based angular GMR sensor by depositing one GMR film stack, utilizing simple patterned processes, and a concise post-annealing procedure based on a special layout. The angular GMR sensor is of good linear performance and achieves a sensitivity of 0.112 mV/V/Oe at the annealing temperature of 260 °C in the magnetic field range from −50 to +50 Oe. This work provides a design and method for GMR-sensor manufacturing that is easy for implementation and suitable for mass production. View Full-Text
Keywords: GMR effect; angular sensor; full Wheatstone bridge; synthetic antiferromagnet GMR effect; angular sensor; full Wheatstone bridge; synthetic antiferromagnet
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Yan, S.; Cao, Z.; Guo, Z.; Zheng, Z.; Cao, A.; Qi, Y.; Leng, Q.; Zhao, W. Design and Fabrication of Full Wheatstone-Bridge-Based Angular GMR Sensors. Sensors 2018, 18, 1832.

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