Next Article in Journal
Flexible Mixed-Potential-Type (MPT) NO2 Sensor Based on An Ultra-Thin Ceramic Film
Next Article in Special Issue
Differential CMOS Sub-Terahertz Detector with Subthreshold Amplifier
Previous Article in Journal
An Ensemble Deep Convolutional Neural Network Model with Improved D-S Evidence Fusion for Bearing Fault Diagnosis
Article Menu
Issue 8 (August) cover image

Export Article

Open AccessArticle
Sensors 2017, 17(8), 1739;

Nanometric Integrated Temperature and Thermal Sensors in CMOS-SOI Technology

Department of Electrical Engineering, Technion—Israel Institute of Technology, Haifa 3200003, Israel
Author to whom correspondence should be addressed.
Received: 6 July 2017 / Revised: 26 July 2017 / Accepted: 27 July 2017 / Published: 29 July 2017
(This article belongs to the Special Issue Integrated Sensors)
Full-Text   |   PDF [3016 KB, uploaded 29 July 2017]   |  


This paper reviews and compares the thermal and noise characterization of CMOS (complementary metal-oxide-semiconductor) SOI (Silicon on insulator) transistors and lateral diodes used as temperature and thermal sensors. DC analysis of the measured sensors and the experimental results in a broad (300 K up to 550 K) temperature range are presented. It is shown that both sensors require small chip area, have low power consumption, and exhibit linearity and high sensitivity over the entire temperature range. However, the diode’s sensitivity to temperature variations in CMOS-SOI technology is highly dependent on the diode’s perimeter; hence, a careful calibration for each fabrication process is needed. In contrast, the short thermal time constant of the electrons in the transistor’s channel enables measuring the instantaneous heating of the channel and to determine the local true temperature of the transistor. This allows accurate “on-line” temperature sensing while no additional calibration is needed. In addition, the noise measurements indicate that the diode’s small area and perimeter causes a high 1/f noise in all measured bias currents. This is a severe drawback for the sensor accuracy when using the sensor as a thermal sensor; hence, CMOS-SOI transistors are a better choice for temperature sensing. View Full-Text
Keywords: CMOS–SOI; lateral diodes; temperature sensors; thermal sensors; semiconductor devices CMOS–SOI; lateral diodes; temperature sensors; thermal sensors; semiconductor devices

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Malits, M.; Nemirovsky, Y. Nanometric Integrated Temperature and Thermal Sensors in CMOS-SOI Technology. Sensors 2017, 17, 1739.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top