Skip to Content
You are currently on the new version of our website. Access the old version .
SensorsSensors
  • Article
  • Open Access

21 June 2016

11 Pages

A Single Nanobelt Transistor for Gas Identification: Using a Gas-Dielectric Strategy

,
,
,
,
and
1
Key Laboratory of UV Light Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun 130024, China
2
Key Laboratory of New Energy and Materials Research, Xinjiang Institute of Engineering, Urumqi 830091, China
*
Authors to whom correspondence should be addressed.
†
These authors contributed equally to this work.
This article belongs to the Special Issue Gas Nanosensors

Abstract

Despite tremendous potential and urgent demand in high-response low-cost gas identification, the development of gas identification based on a metal oxide semiconductor nanowire/nanobelt remains limited by fabrication complexity and redundant signals. Researchers have shown a multisensor-array strategy with “one key to one lock” configuration. Here, we describe a new strategy to create high-response room-temperature gas identification by employing gas as dielectric. This enables gas discrimination down to the part per billion (ppb) level only based on one pristine single nanobelt transistor, with the excellent average Mahalanobis distance (MD) as high as 35 at the linear discriminant analysis (LDA) space. The single device realizes the selective recognition function of electronic nose. The effect of the gas dielectric on the response of the multiple field-effect parameters is discussed by the comparative investigation of gas and solid-dielectric devices and the studies on trap density changes in the conductive channel. The current work opens up exciting opportunities for room-temperature gas recognition based on the pristine single device.

Article Metrics

Citations

Article Access Statistics

Multiple requests from the same IP address are counted as one view.