High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor
Al-Hardan, N.H.; Abdul Hamid, M.A.; Ahmed, N.M.; Jalar, A.; Shamsudin, R.; Othman, N.K.; Kar Keng, L.; Chiu, W.; Al-Rawi, H.N. High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor. Sensors 2016, 16, 839. https://doi.org/10.3390/s16060839
Al-Hardan NH, Abdul Hamid MA, Ahmed NM, Jalar A, Shamsudin R, Othman NK, Kar Keng L, Chiu W, Al-Rawi HN. High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor. Sensors. 2016; 16(6):839. https://doi.org/10.3390/s16060839
Chicago/Turabian StyleAl-Hardan, Naif H., Muhammad A. Abdul Hamid, Naser M. Ahmed, Azman Jalar, Roslinda Shamsudin, Norinsan K. Othman, Lim Kar Keng, Weesiong Chiu, and Hamzah N. Al-Rawi. 2016. "High Sensitivity pH Sensor Based on Porous Silicon (PSi) Extended Gate Field-Effect Transistor" Sensors 16, no. 6: 839. https://doi.org/10.3390/s16060839