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Article

Characterization of Piezoresistive PEDOT:PSS Pressure Sensors with Inter-Digitated and Cross-Point Electrode Structures

1
Department of Electronic Engineering, Chang Gung University, Kweishan 33302, Taoyuan, Taiwan
2
Healthy and Aging Center, Chang Gung University, Kweishan 33302, Taoyuan, Taiwan
3
Department of Neurosurgery, Chang Gung Memorial Hospital, Kweishan 33305, Taoyuan, Taiwan
*
Author to whom correspondence should be addressed.
Sensors 2015, 15(1), 818-831; https://doi.org/10.3390/s150100818
Received: 11 November 2014 / Accepted: 25 December 2014 / Published: 5 January 2015
(This article belongs to the Section Physical Sensors)
The piezoresistive characteristics of poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) pressure sensors with inter-digitated (IDE) and cross-point electrode (CPE) structures have been investigated. A small variation of the resistance of the pressure sensors with IDE without bottom indium-tin-oxide (b-ITO) film and with CPE structures was observed owing to the single carrier-conducting pathway. For the IDE pressure sensors with b-ITO, the piezoresistive characteristics at low and high pressure were similar to those of the pressure sensors with IDE without b-ITO and with CPE structures, respectively, leading to increased piezoresistive pressure sensitivity as the PEDOT:PSS film thickness decreased. A maximum sensitivity of more than 42 kΩ/Pa was achieved. When the normal pressure was applied, the increased number of conducting points or the reduced distance between the PEDOT oligomers within the PEDOT:PSS film resulted in a decrease of the resistance. The piezoresistive pressure sensors with a single carrier-conducting pathway, i.e., IDE without b-ITO and CPE structures, exhibited a small relaxation time and a superior reversible operation, which can be advantageous for fast piezoresistive response applications. View Full-Text
Keywords: piezoresistive; poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS); inter-digitated; cross-point; relaxation time piezoresistive; poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS); inter-digitated; cross-point; relaxation time
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MDPI and ACS Style

Wang, J.-C.; Karmakar, R.S.; Lu, Y.-J.; Huang, C.-Y.; Wei, K.-C. Characterization of Piezoresistive PEDOT:PSS Pressure Sensors with Inter-Digitated and Cross-Point Electrode Structures. Sensors 2015, 15, 818-831. https://doi.org/10.3390/s150100818

AMA Style

Wang J-C, Karmakar RS, Lu Y-J, Huang C-Y, Wei K-C. Characterization of Piezoresistive PEDOT:PSS Pressure Sensors with Inter-Digitated and Cross-Point Electrode Structures. Sensors. 2015; 15(1):818-831. https://doi.org/10.3390/s150100818

Chicago/Turabian Style

Wang, Jer-Chyi, Rajat S. Karmakar, Yu-Jen Lu, Chiung-Yin Huang, and Kuo-Chen Wei. 2015. "Characterization of Piezoresistive PEDOT:PSS Pressure Sensors with Inter-Digitated and Cross-Point Electrode Structures" Sensors 15, no. 1: 818-831. https://doi.org/10.3390/s150100818

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