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Open AccessArticle

Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers: High Detectivity in the Near-Infrared

1
Center for Polymers and Organic Solids, University of California Santa Barbara, Santa Barbara, CA 93106-5090, USA
2
Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195-4330, USA
*
Authors to whom correspondence should be addressed.
Sensors 2010, 10(7), 6488-6496; https://doi.org/10.3390/s100706488
Received: 22 April 2010 / Revised: 11 May 2010 / Accepted: 30 June 2010 / Published: 1 July 2010
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)
Sensing from the ultraviolet-visible to the infrared is critical for a variety of industrial and scientific applications. Photodetectors with broad spectral response, from 300 nm to 1,100 nm, were fabricated using a narrow-band gap semiconducting polymer blended with a fullerene derivative. By using both an electron-blocking layer and a hole-blocking layer, the polymer photodetectors, operating at room temperature, exhibited calculated detectivities greater than 1013 cm Hz1/2/W over entire spectral range with linear dynamic range approximately 130 dB. The performance is comparable to or even better than Si photodetectors. View Full-Text
Keywords: semiconducting polymer; photodetectors; blocking layers; detectivity semiconducting polymer; photodetectors; blocking layers; detectivity
MDPI and ACS Style

Gong, X.; Tong, M.-H.; Park, S.H.; Liu, M.; Jen, A.; Heeger, A.J. Semiconducting Polymer Photodetectors with Electron and Hole Blocking Layers: High Detectivity in the Near-Infrared. Sensors 2010, 10, 6488-6496.

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