Sánchez, P.; Lorenzo, O.; Menéndez, A.; Menéndez, J.L.; Gomez, D.; Pereiro, R.; Fernández, B.
Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry: A Correlation of Conductivity and Bandgap Energy Measurements. Int. J. Mol. Sci. 2011, 12, 2200-2215.
https://doi.org/10.3390/ijms12042200
AMA Style
Sánchez P, Lorenzo O, Menéndez A, Menéndez JL, Gomez D, Pereiro R, Fernández B.
Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry: A Correlation of Conductivity and Bandgap Energy Measurements. International Journal of Molecular Sciences. 2011; 12(4):2200-2215.
https://doi.org/10.3390/ijms12042200
Chicago/Turabian Style
Sánchez, Pascal, Olaya Lorenzo, Armando Menéndez, Jose Luis Menéndez, David Gomez, Rosario Pereiro, and Beatriz Fernández.
2011. "Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry: A Correlation of Conductivity and Bandgap Energy Measurements" International Journal of Molecular Sciences 12, no. 4: 2200-2215.
https://doi.org/10.3390/ijms12042200
APA Style
Sánchez, P., Lorenzo, O., Menéndez, A., Menéndez, J. L., Gomez, D., Pereiro, R., & Fernández, B.
(2011). Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry: A Correlation of Conductivity and Bandgap Energy Measurements. International Journal of Molecular Sciences, 12(4), 2200-2215.
https://doi.org/10.3390/ijms12042200