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Peng Y, Liu L, Xu Q, Luo Y, Bai J, Xie X, Wei H, Wei W, Xiao K, Sun W. Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics. Molecules. 2025; 30(6):1307. https://doi.org/10.3390/molecules30061307

Peng, Yi, Lingyun Liu, Qingfeng Xu, Yuqiang Luo, Jianzhi Bai, Xifeng Xie, Huanbing Wei, Wenwang Wei, Kai Xiao, and Wenhong Sun. 2025. "Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics" Molecules 30, no. 6: 1307. https://doi.org/10.3390/molecules30061307

Peng, Y., Liu, L., Xu, Q., Luo, Y., Bai, J., Xie, X., Wei, H., Wei, W., Xiao, K., & Sun, W. (2025). Improvement of GaN-Based Device Performance by Plasma-Enhanced Chemical Vapor Deposition (PECVD) Directly Preparing h-BN with Excellent Thermal Management Characteristics. Molecules, 30(6), 1307. https://doi.org/10.3390/molecules30061307