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Keywords = trench junction barrier Schottky diodes

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10 pages, 2311 KiB  
Article
Design and Optimization of High Performance Multi-Step Separated Trench 4H-SiC JBS Diode
by Jinlan Li, Ziheng Wu, Huaren Sheng, Yan Xu and Liming Zhou
Electronics 2024, 13(21), 4143; https://doi.org/10.3390/electronics13214143 - 22 Oct 2024
Viewed by 1567
Abstract
In this paper, a novel 3300 V/40 A 4H-SiC junction barrier Schottky diode (JBS) with a multi-step separated trench (MST) structure is proposed and thoroughly investigated using TCAD simulations. The results show that the introduction of MST expands the Schottky contact area, resulting [...] Read more.
In this paper, a novel 3300 V/40 A 4H-SiC junction barrier Schottky diode (JBS) with a multi-step separated trench (MST) structure is proposed and thoroughly investigated using TCAD simulations. The results show that the introduction of MST expands the Schottky contact area, resulting in a decrease in the forward voltage drop. Furthermore, the combination of the deep P+ shielded region and the central P+ region effectively reduces the leakage current, leading to a 43.7% increase in the blocking voltage compared to conventional 4H-SiC JBS. The effects of the step depth (ds) and the width of the central P+ region (wm) on the device performance are analyzed in depth. In addition, a multi-step trenched linearly graded field-limiting rings (MTLG-FLR) termination ensures a more uniform electric field distribution, and the terminal protection efficiency reaches up to 90%, which further enhances the reliability of the terminal structure. Full article
(This article belongs to the Special Issue Artificial Intelligence, Computer Vision and 3D Display)
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13 pages, 3073 KiB  
Article
Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling
by Jian Yin, Sihao Chen, Hang Chen, Shuti Li, Houqiang Fu and Chao Liu
Electronics 2022, 11(13), 1972; https://doi.org/10.3390/electronics11131972 - 24 Jun 2022
Cited by 6 | Viewed by 2898
Abstract
We report gallium nitride (GaN) vertical trench junction barrier Schottky (TJBS) diodes and systematically analyzed the effects of the key design parameters on the reverse and forward characteristics of the devices. By taking advantage of the shielding effects from both the trenches and [...] Read more.
We report gallium nitride (GaN) vertical trench junction barrier Schottky (TJBS) diodes and systematically analyzed the effects of the key design parameters on the reverse and forward characteristics of the devices. By taking advantage of the shielding effects from both the trenches and pn junctions in the TJBS structure, the high electric field at the Schottky contact region can be effectively suppressed. We found that the doping concentration, thickness, and spacing of p-GaN, as well as the depth and angle of the trench sidewalls are closely associated with the electric field distribution and the reverse characteristics of the TJBS diodes. With an optimal set of design parameters, the local electric field crowding at either the corner of the trench or the edge of the p-GaN can also be alleviated, resulting in a boosted breakdown voltage of up to 1250 V in the TJBS diodes. In addition, an analytical model was developed to explore the physical mechanism behind the forward conduction behaviors. We believe that the results can provide a systematical design strategy for the development of low-loss, high-voltage, and high-power GaN power diodes towards an efficient power system. Full article
(This article belongs to the Special Issue GaN-Based Power Electronic Devices and Their Applications)
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