Search Results (28)

Aluminum ion batteries (AIBs) exhibit a promising development prospect due to their advantages such as high theoretical specific capacity, high safety, low cost, and sufficient raw material sources. In this work, nanosheet tin disulfide (SnS₂) was successfully prepared using the hydrothermal method and then used as a cathode material for AIBs. The synthesized nano-flake SnS₂ has a large size and thin thickness, with a size of about 900 nm and a thickness of about 150 nm. This electrode material effectively enhances the contact interface with the electrolyte and shortens the depth and travel distance of ion deintercalation. As an electrode, the battery obtained a residual discharge specific capacity of about 55 mAh g⁻¹ and a coulombic efficiency of about 83% after 600 cycles. Furthermore, the first-principles calculation results show that the energy storage mechanism is the deintercalation behavior of Al³⁺. Based on model analysis and calculation results, it can be seen that compared with the position between two sulfur atoms, Al³⁺ is more inclined to be deintercalated directly above the sulfur atom. This study provides fundamental data for the large-scale preparation of AIBs using SnS₂ as an electrode material and the application research of AIBs. Full article

To improve the friction performance and service life of protective coatings in humidity-fluctuating environments, porous hard titanium nitride (TiN)–molybdenum disulfide (MoS₂) composite coatings were prepared by using direct current magnetron sputtering (DCMS) with the mode of oblique angle deposition (OAD) and chemical vapor deposition (CVD) technologies. The structure and chemical component were characterized by field emission scanning electron microscopy (FESEM), energy dispersive spectrometer (EDS), grazing incidence X-ray diffraction (GIXRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. The tribological properties of these TiN–MoS₂ composite coatings were investigated. The results indicate that the porous TiN–MoS₂ composite coating exhibited outstanding friction performance and long service life under humidity-fluctuating environments. At the initial 20% relative humidity (RH) stage, the MoS₂ on the porous TiN–MoS₂ composite coating surface worked as an effective lubricant; thus, the coating demonstrated excellent lubrication performance, and the friction coefficient (COF) was about 0.05. As the humidity was alternated to 70% RH, the lubrication effect diminished due to the production of molybdenum oxide (MoO₃), and the COF was about 0.2, which was attributed to the degradation of MoS₂ on the wear track and the release of fresh MoS₂ from the porous TiN matrix. After the environmental conditions shifted from 70% to 20% RH, the MoO₃ was removed, and the lubrication effect was restored. In summary, TiN–MoS₂ porous composite coating offers a promising approach for lubrication in humidity-fluctuating environments. Full article

The manufacturing of work parts made of powder (sintered) steels is currently widespread in industry, as it provides minimal processing allowances and high dimensional accuracy, as well as the required properties and unconventional chemical composition. At the same time, their low tensile or bending strength must be considered a serious disadvantage. In order to minimize these disadvantages, a number of strengthening technologies are used, among which is the infiltration of porous base materials with metal alloys. In this study, the details of finish turning of sintered iron-graphite-based steel infiltrated with tin bronze with molybdenum disulfide addition are considered. Changes in the shape of chips and their geometric features, as well as the 3D parameters and topography features of the surface machined, are presented after finish turning with AH8015 carbide inserts. The cutting speed (v_c) and feed rate (f) were used as variable parameters. It was found that when turning the powder steels under study, the chips took the shape of small fragments or element chips, including segmented chips. For quenching steel, the formation of irregular lamellae was observed and for the initial state, a serrated chip was registered. For the initial state, a reduction in K_b values was observed in the range of the v_c of 50–100 m/min and f of 0.05–0.075 mm/rev, and for quenching in the range of 225–250 m/min and 0.05–0.075 mm/rev. Compared to the initial state, for quenching, depending on the cutting parameters, a 14% reduction in the chip spreading ratio K_b or an increase from 2 to 32% was registered. For the initial state and quenching, a decrease in the Sp and Sv parameters was achieved in the range of the v_c of 200–250 m/min and f of 0.05–0.075 mm/rev, and there was an increase in the range of 50–150 m/min and 0.125–0.15 mm/rev. Compared to the initial state, an increase in the Sz parameter from 10 to 35% was observed for quenching. On the surfaces machined with v_c = 50 m/min and f = 0.05 mm/rev, waves and single significant peaks were observed. On the other hand, v_c = 250 m/min and f = 0.15 mm/rev provided classical feed tracks in the form of valleys and irregular ridges on the surfaces machined. The test results can be useful in the design and manufacturing of industrial parts made of powder steels. Full article

Chemical warfare agents (CWAs) are known as poor man’s bombs because of their small lethal dose, cheapness, and ease of production. Therefore, the highly sensitive and rapid detection of CWAs at room temperature (RT = 25 °C) is essential. In this paper, we have developed a resistive semiconductor sensor for the highly sensitive detection of CWAs at RT. The gas-sensing material is SnS₂/rGO nanosheets (NSs) prepared by hydrothermal synthesis. The lower detection limits of the SnS₂/rGO NSs-based gas sensor were 0.05 mg/m³ and 0.1 mg/m³ for the typical chemical weapons sarin (GB) and sulfur mustard (HD), respectively. The responsivity can reach −3.54% and −10.2% in 95 s for 1.0 mg/m³ GB, and in 47 s for 1.0 mg/m³ HD. They are 1.17 and 2.71 times higher than the previously reported Nb-MoS₂ NSs-based gas sensors, respectively. In addition, it has better repeatability (RSD = 6.77%) and stability for up to 10 weeks (RSD = 20.99%). Furthermore, to simplify the work of later researchers based on the detection of CWAs by two-dimensional transition metal sulfur compounds (2D-TMDCs), we carried out calculations of the SnS₂ NSs-based and SnS₂/rGO NSs-based gas sensor-adsorbing CWAs. Detailed comparisons are made in conjunction with experimental results. For different materials, it was found that the SnS₂/rGO NSs-based gas sensor performed better in all aspects of adsorbing CWAs in the experimental results. Adsorbed CWAs at a distance smaller than that of the SnS₂ NSs-based gas sensor in the theoretical calculations, as well as its adsorption energy and transferred charge, were larger than those of the SnS₂ NSs-based gas sensor. For different CWAs, the experimental results show that the sensitivity of the SnS₂/rGO NSs-based gas sensor for the adsorption of GB is higher than that of HD, and accordingly, the theoretical calculations show that the adsorption distance of the SnS₂/rGO NSs-based gas sensor for the adsorption of GB is smaller than that of HD, and the adsorption energy and the amount of transferred charge are larger than that of HD. This regularity conclusion proves the feasibility of adsorption of CWAs by gas sensors based on SnS₂ NSs, as well as the feasibility and reliability of theoretical prediction experiments. This work lays a good theoretical foundation for subsequent rapid screenings of gas sensors with gas-sensitive materials for detecting CWAs. Full article

This article reports a simple hydrothermal method for synthesizing nickel disulfide (NiS₂) on the surface of fluorine-doped tin oxide (FTO) glass, followed by the deposition of 5 nm Au nanoparticles on the electrode surface by physical vapor deposition. This process ensures the uniform distribution of Au nanoparticles on the NiS₂ surface to enhance its conductivity. Finally, an Au@NiS₂-FTO electrochemical biosensor is obtained for the detection of dopamine (DA). The composite material is characterized using transmission electron microscopy (TEM), UV-Vis spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The electrochemical properties of the sensor are investigated using cyclic voltammetry (CV), differential pulse voltammetry (DPV), and time current curves in a 0.1 M PBS solution (pH = 7.3). In the detection of DA, Au@NiS₂-FTO exhibits a wide linear detection range (0.1~1000 μM), low detection limit (1 nM), and fast response time (0.1 s). After the addition of interfering substances, such as glucose, L-ascorbic acid, uric acid, CaCl₂, NaCl, and KCl, the electrode potential remains relatively unchanged, demonstrating its strong anti-interference capability. It also demonstrates strong sensitivity and reproducibility. The obtained Au@NiS₂-FTO provides a simple and easy-to-operate example for constructing nanometer catalysts with enzyme-like properties. These results provide a promising method utilizing Au coating to enhance the conductivity of transition metal sulfides. Full article

The quest for water-splitting photocatalysts to generate hydrogen as a clean energy source from two-dimensional (2D) materials has enormous implications for sustainable energy solutions. Photocatalytic water splitting, a major field of interest, is focused on the efficient production of hydrogen from renewable resources such as water using 2D materials. Tin sulfide and tin disulfide, collectively known as SnS and SnS₂, respectively, are metal sulfide compounds that have gained attention for their photocatalytic properties. Their unique electronic structures and morphological characteristics make them promising candidates for harnessing solar energy for environmental and energy-related purposes. CdS/SnS/SnS₂ photocatalysts with two Sn phases (II and IV) were synthesized using a solvothermal method in this study. CdS was successfully placed on a broad SnS/SnS₂ plane after a series of characterizations. We found that it is composited in the same way as a core-shell shape. When the SnS/SnS₂ phase ratio was dominated by SnS and the structure was composited with CdS, the degradation efficiency was optimal. This material demonstrated high photocatalytic hydrogenation efficiency as well as efficient photocatalytic removal of Cr(VI) over 120 min. Because of the broad light absorption of CdS, the specific surface area, which is the reaction site, became very large. Second, it served as a transport medium for electron transfer from the conduction band (CB) of the SnS to the CB of the SnS₂. Because of the composite, these electrons flowed into the CB of CdS, improving the separation efficiency of the photogenerated carriers even further. This material, which was easily composited, also effectively prevented mineral corrosion, which is a major issue with CdS. Full article

The scientific community believes that high-quality, bulk layered, semiconducting single crystals are crucial for producing two-dimensional (2D) nanosheets. This has a significant impact on current cutting-edge science in the development of next-generation electrical and optoelectronic devices. To meet this ever-increasing demand, efforts have been made to manufacture high-quality SnS₂ single crystals utilizing low-cost CVT (chemical vapor transportation) technology, which allows for large-scale crystal production. Based on the chemical reaction that occurs throughout the CVT process, a viable mechanism for SnS₂ growth is postulated in this paper. Optical, XRD with Le Bail fitting, TEM, and SEM are used to validate the quality, phase, gross structural/microstructural analyses, and morphology of SnS₂ single crystals. Furthermore, Raman, TXRF, XPS, UV–Vis, and PL spectroscopy are used to corroborate the quality of the SnS₂ single crystals, as well as the proposed energy level diagram for indirect transition in the bulk SnS₂ single crystals. As a result, the suggested method provides a cost-effective method for growing high-quality SnS₂ single crystals, which could lead to a new alternative resource for producing 2D SnS₂ nanosheets, which are in great demand for designing next-generation optoelectronic and quantum devices. Full article

Two-dimensional (2D) materials own unique band structures and excellent optoelectronic properties and have attracted wide attention in photonics. Tin disulfide (SnS₂), a member of group IV-VI transition metal dichalcogenides (TMDs), possesses good environmental optimization, oxidation resistance, and thermal stability, making it more competitive in application. By using the intensity-dependent transmission experiment, the saturable absorption properties of the SnS₂ nanosheet nearly at 3 μm waveband were characterized by a high modulation depth of 32.26%. Therefore, a few-layer SnS₂ was used as a saturable absorber (SA) for a bulk Er:SrF₂ laser to research its optical properties. When the average output power was 140 mW, the passively Q-switched laser achieved the shortest pulse width at 480 ns, the optimal single pulse energy at 3.78 µJ, and the highest peak power at 7.88 W. The results of the passively Q-switched laser revealed that few-layer SnS₂ had an admirable non-linear optical response at near 3 μm mid-infrared solid-state laser. Full article

Lightweight and flexible electronics have recently emerged at the forefront of optoelectronic applications. In this regard, graphene electrodes enable opportunities for new photodiode devices. In this paper, we formulated and tested graphene ink using the standard inkjet printing technique. It was shown that the maximum conductivity of ink was achieved for 14 print passes of the graphene layer. Moreover, we deposited Molybdenum Disulfide (MoS₂) ink in the same pattern and used it as an active layer. We put MoS₂ ink on an Indium-Tin-Oxide (ITO) glass substrate and then deposited graphene ink as a top electrode to fabricate an ITO/MoS₂/graphene device. The fabricated device showed good rectification behavior and high ON/OFF switching behavior with a max photocurrent of 15 µA at +2 V. The technique thus paves the way for low-cost, low-temperature processing of electronics and one-step fabrication. Full article

Dimensional nanomaterials can offer enhanced application properties benefiting from their sizes and morphological orientations. Tin disulfide (SnS₂) and carbon are typical sources of dimensional nanomaterials. SnS₂ is a semiconductor with visible light adsorption properties and has shown high energy density and long cycle life in energy storage processes. The integration of SnS₂ and carbon materials has shown enhanced visible light absorption and electron transmission efficiency. This helps to alleviate the volume expansion of SnS₂ which is a limitation during energy storage processes and provides a favorable bandgap in photocatalytic degradation. Several innovative approaches have been geared toward controlling the size, shape, and hybridization of SnS₂/Carbon composite nanostructures. However, dimensional nanomaterials of SnS₂ and SnS₂/Carbon have rarely been discussed. This review summarizes the synthesis methods of zero-, one-, two-, and three-dimensional SnS₂ and SnS₂/Carbon composite nanomaterials through wet and solid-state synthesis strategies. Moreover, the unique properties that promote their advances in photocatalysis and energy conversion and storage are discussed. Finally, some remarks and perspectives on the challenges and opportunities for exploring advanced SnS₂/Carbon nanomaterials are presented. Full article

Copper zinc tin sulfide (CZTS) can be considered an important absorber layer material for utilization in thin film solar cell devices because of its non-toxic, earth abundance, and cost-effective properties. In this study, the effect of molybdenum disulfide (MoS₂) as a buffer layer on the different parameters of CZTS-based solar cell devices was explored to design a highly efficient solar cell. While graphene is considered a transparent conducting oxide (TCO) layer for the superior quantum efficiency of CZTS thin film solar cells, MoS₂ acts as a hole transport layer to offer electron–hole pair separation and an electron blocking layer to prevent recombination at the graphene/CZTS interface. This study proposed and analyzed a competent and economic CZTS solar cell structure (graphene/MoS₂/CZTS/Ni) with MoS₂ and graphene as the buffer and TCO layers, respectively, using the Solar Cell Capacitance Simulator (SCAPS)-1D. The proposed structure exhibited the following enhanced solar cell performance parameters: open-circuit voltage—0.8521 V, short-circuit current—25.3 mA cm⁻², fill factor—84.76%, and efficiency—18.27%. Full article

The silicon heterojunction solar cell (SHJ) is considered the dominant state-of-the-art silicon solar cell technology due to its excellent passivation quality and high efficiency. However, SHJ’s light management performance is limited by its narrow optical absorption in long-wave near-infrared (NIR) due to the front, and back tin-doped indium oxide (ITO) layer’s free carrier absorption and reflection losses. Despite the light-trapping efficiency (LTE) schemes adopted by SHJ in terms of back surface texturing, the previous investigations highlighted the ITO layer as a reason for an essential long-wavelength light loss mechanism in SHJ solar cells. In this study, we propose the use of Molybdenum disulfide (MoS₂) as a way of improving back-reflection in SHJ. The text presents simulations of the optical response in the backside of the SHJ applying the Monte-Carlo raytracing method with a web-based Sunsolve high-precision raytracing tool. The solar cells’ electrical parameters were also resolved using the standard electrical equivalent circuit model provided by Sunsolve. The proposed structure geometry slightly improved the SHJ cell optical current density by ~0.37% (rel.), and hence efficiency (η) by about 0.4% (rel.). The SHJ cell efficiency improved by 21.68% after applying thinner back ITO of about 30 nm overlayed on ~1 nm MoS₂. The efficiency improvement following the application of MoS₂ is tentatively attributed to the increased NIR absorption in the silicon bulk due to the light constructive interface with the backside components, namely silver (Ag) and ITO. Study outcomes showed that improved SHJ efficiency could be further optimized by addressing front cell components, mainly front ITO and MoS₂ contact engineering. Full article

Tin disulfide (SnS₂) is a promising semiconductor for use in nanoelectronics and optoelectronics. Doping plays an essential role in SnS₂ applications, because it can increase the functionality of SnS₂ by tuning its original properties. In this study, the effect of zinc (Zn) doping on the photoelectric characteristics of SnS₂ crystals was explored. The chemical vapor transport method was adopted to grow pristine and Zn-doped SnS₂ crystals. Scanning electron microscopy images indicated that the grown SnS₂ crystals were layered materials. The ratio of the normalized photocurrent of the Zn-doped specimen to that of the pristine specimen increased with an increasing illumination frequency, reaching approximately five at 10⁴ Hz. Time-resolved photocurrent measurements revealed that the Zn-doped specimen had shorter rise and fall times and a higher current amplitude than the pristine specimen. The photoresponsivity of the specimens increased with an increasing bias voltage or decreasing laser power. The Zn-doped SnS₂ crystals had 7.18 and 3.44 times higher photoresponsivity, respectively, than the pristine crystals at a bias voltage of 20 V and a laser power of 4 × 10⁻⁸ W. The experimental results of this study indicate that Zn doping markedly enhances the optical response of SnS₂ layered crystals. Full article

The different size of plasmonic gold nanorods (NRs) were synthesized by the overgrown seeds method and applied to vacuum-free hybrid solar cells (VFHSCs). Tin disulfide (SnS₂) quantum dots were synthesized and used as an n-type material of the device. The synthesized materials were characterized by different techniques such as transmission electron microscopy (TEM), UV-Vis spectroscopy, and atomic force microscopy (AFM). The Au (NRs) had a different of size of NR1 (Width: 4 nm; Length: 12 nm), NR2 (Width: 5 nm; Length: 16 nm), NR3 (Width: 6 nm; Length: 22 nm) which were measured using a TEM technique. The Au NR particles were incorporated into the PEDOT:PSS as a hole transport layer (HTL) of solar cells device. The effects of Au NRs size on the device performance were investigated. A thin film of Zin oxide (ZnO) was used as a buffer layer of the device. The influence of buffer layer thickness on the device’s active layer surface morphology was also studied. At the optimized condition, the highest power conversion efficiency was obtained at about ~3.7%. Full article

Tin disulfide has substantial importance for two-dimensional material-based optoelectronics and sensors due to its unique optoelectrical properties. In this report, we fabricate SnS₂ nanosheets using the low-pressure thermal sulfurization process, whose crystal structure and surface morphology are confirmed by X-ray diffraction (XRD) and scanning electron microscope (SEM) measurements. From photoconductivity measurement and photocurrent mapping, we observe smaller electrode spacing of SnS₂ thin films can enhance photodetection. Then, by the H₂O₂ oxidation processing, we transform SnS₂ to SnO₂ to detect humidity. The measured response and recovery time can be optimized to 5.6 and 1.0 s, respectively, shorter than those of commercial DHT11 humidity sensor of 32 and 34 s. At suitable bias, humidity sensor can detect human respiration properly at room temperature. Our results show that SnS₂ nanosheets exhibit reasonable performance for emergent photodetector applications and humidity sensing. Full article