Search Results (6)

Infrared analysis reveals the presence of interwoven inclusions, primarily comprised of silicon nitride and silicon carbide, in the casting process of monocrystalline silicon ingots. This study investigates how the longitudinal temperature gradient affects the removal of inclusions during the casting of monocrystalline silicon ingots through simulations and comparative experiments. Two monocrystalline silicon ingots were cast, each using different longitudinal temperature gradients: one employing smaller gradients and the other conventional gradients. CGSim (Version Basic CGSim 23.1) simulation software was utilized to analyze the melt flow and temperature distribution during the growth process of quasi–monocrystalline silicon ingots. The findings indicate that smaller longitudinal temperature gradients lead to a more robust upward flow of molten silicon at the solid–liquid interface, effectively carrying impurities away from this interface and preventing their inclusion formation. Analysis of experimental photoluminescence and IR results reveals that although inclusions may not be observed, impurities persist but are gradually displaced to the top of the silicon melt through a stable growth process. Full article

Accurate parameter estimation is crucial and challenging for the design and modeling of PV cells/modules. However, the high degree of non-linearity of the typical I–V characteristic further complicates this task. Consequently, significant research interest has been generated in recent years. Currently, this trend has been marked by a noteworthy acceleration, mainly due to the rise of swarm intelligence and the rapid progress of computer technology. This paper proposes a developed Mountain Gazelle Optimizer (MGO) to generate the best values of the unknown parameters of PV generation units. The MGO mimics the social life and hierarchy of mountain gazelles in the wild. The MGO was compared with well-recognized recent algorithms, which were the Grey Wolf Optimizer (GWO), the Squirrel Search Algorithm (SSA), the Differential Evolution (DE) algorithm, the Bat–Artificial Bee Colony Optimizer (BABCO), the Bat Algorithm (BA), Multiswarm Spiral Leader Particle Swarm Optimization (M-SLPSO), the Guaranteed Convergence Particle Swarm Optimization algorithm (GCPSO), Triple-Phase Teaching–Learning-Based Optimization (TPTLBO), the Criss-Cross-based Nelder–Mead simplex Gradient-Based Optimizer (CCNMGBO), the quasi-Opposition-Based Learning Whale Optimization Algorithm (OBLWOA), and the Fractional Chaotic Ensemble Particle Swarm Optimizer (FC-EPSO). The experimental findings and statistical studies proved that the MGO outperformed the competing techniques in identifying the parameters of the Single-Diode Model (SDM) and the Double-Diode Model (DDM) PV models of Photowatt-PWP201 (polycrystalline) and STM6-40/36 (monocrystalline). The RMSEs of the MGO on the SDM and the DDM of Photowatt-PWP201 and STM6-40/36 were 2.042717 $\times {10}^{-3}$, 1.387641 $\times {10}^{-3}$, 1.719946 $\times {10}^{-3}$, and 1.686104 $\times {10}^{-3}$, respectively. Overall, the identified results highlighted that the MGO-based approach featured a fast processing time and steady convergence while retaining a high level of accuracy in the achieved solution. Full article

Graphene transfer onto ceramics, like Si/SiO₂, is well-developed and described in the literature. However, it is problematic for other ceramic materials (e.g., Al₂O₃ and ZrO₂), especially porous ones. In this case, it is mainly due to poor adhesion to the substrate, resulting in strong degradation of the graphene. For these reasons, the research topic of this study was undertaken. This article presents research on the development of the methodology of graphene transfer onto ceramic Al₂O₃ surfaces. Polycrystalline graphene chemical vapour deposition (CVD) monolayer and quasimonocrystalline high-strength metallurgical graphene (HSMG^®) synthesised on liquid copper were used. When developing the transfer methodology, the focus was on solving the problem of graphene adhesion to the surface of this type of ceramic, and thus reducing the degree of graphene deterioration at the stage of producing a ceramic–graphene composite, which stands in the way of its practical use. Plasma and chemical ceramic surface modification were applied to change its hydrophobicity, and thus to improve the adhesion between the graphene and ceramic. The modification included the use of dielectric barrier discharge (DBD) plasma, oxygen plasma (RF PACVD method - Radio Frequency Plasma Assisted Chemical Vapour Deposition), and hydrofluoric acid treatment. Changes in surface properties caused by the modifications were determined by measuring the contact angle and (in the case of chemical modification) measuring the degree of surface development. The effectiveness of the applied surface preparation methodology was evaluated based on the damage degree of CVD and HSMG^® graphene layer transferred onto modified Al₂O₃ using optical microscopy and Raman spectroscopy. The best average I_D/I_G ratio for the transferred HSMG^® graphene was obtained after oxygen plasma modification (0.63 ± 0.18) and for CVD, graphene DBD plasma was the most appropriate method (0.17 ± 0.09). The total area of graphene defects after transfer to Al₂O₃ was the smallest for HSMG^® graphene after modification with O₂ plasma (0.251 mm²/cm²), and for CVD graphene after surface modification with DBD plasma (0.083 mm²/cm²). Full article

We investigate the evolution mechanisms of the laser-induced periodic surface structures (LIPSS) and quasi-periodic grooves that are formed on the surface of monocrystalline silicon (mono-Si) when exposed to femtosecond laser radiation of different pulse duration, state of polarization, and fluence. The conditions required for producing LIPSS-free complex micro-ridge patterns are elaborated. The LIPSS evolution mechanism is explained in terms of scattering/interference-based phenomena. To establish the basis for our interpretation, single femtosecond pulses of different pulse durations are irradiated on mono-Si. The absence/appearance of LIPSS rudiments is explained in the context of spectral bandwidth and the associated effects on the intensity of the central wavelength. Shorter fs pulses of a wider bandwidth are employed to induce LIPSS-free micro-ridge patterns. It is demonstrated that the resultant micro-ridge patterns depend on the laser fluence distribution and can be manipulated through laser polarization. The curved morphology of LIPSS rudiments and the evolution mechanism of low- and high-spatial frequency LIPSS, i.e., LSFL and HSFL, are discussed. Finally, it is demonstrated that the consolidated quasi-periodic grooves result from HSFL welding together groups of LSFL. Although our findings are based on fs laser interaction with mono-Si, the results can also be applied to many other materials. Full article

The ability to precisely measure magnetic fields under extreme operating conditions is becoming increasingly important as a result of the advent of modern diagnostics for future magnetic-confinement fusion devices. These conditions are recognized as strong neutron radiation and high temperatures (up to 350 °C). We report on the first experimental comparison of the impact of neutron radiation on graphene and indium antimonide thin films. For this purpose, a 2D-material-based structure was fabricated in the form of hydrogen-intercalated quasi-free-standing graphene on semi-insulating high-purity on-axis 4H-SiC(0001), passivated with an Al₂O₃ layer. InSb-based thin films, donor doped to varying degrees, were deposited on a monocrystalline gallium arsenide or a polycrystalline ceramic substrate. The thin films were covered with a SiO₂ insulating layer. All samples were exposed to a fast-neutron fluence of ≈$7\times {10}^{17}$ cm⁻². The results have shown that the graphene sheet is only moderately affected by neutron radiation compared to the InSb-based structures. The low structural damage allowed the graphene/SiC system to retain its electrical properties and excellent sensitivity to magnetic fields. However, InSb-based structures proved to have significantly more post-irradiation self-healing capabilities when subject to proper temperature treatment. This property has been tested depending on the doping level and type of the substrate. Full article

To access the properties of theoretical graphene, it is crucial to manufacture layers with a defect-free structure. The imperfections of the structure are the cause of deterioration in both electrical and mechanical properties. Among the most commonly occurring crystalline defects, there are grain boundaries and overlapping zones. Hence, perfect graphene shall be monocrystalline, which is difficult and expensive to obtain. An alternative to monocrystalline structure is a quasi-monocrystalline graphene with low angle-type boundaries without the local overlapping of neighboring flakes. The purpose of this work was to identify factors that directly affect the structure of graphene grown on a surface of a liquid metal. In the article the growth of graphene on a liquid copper is presented. Nucleating graphene flakes are able to move with three degrees of freedom creating low-angle type boundaries when they attach to one another. The structure of graphene grown with the use of this method is almost free of overlapping zones. In addition, the article presents the influence of impurities on the amount of crystallization nuclei formed, and thus the possibility to order the structure, creating a quasi-monocrystalline layer. Full article