- Article
Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma
- Ki Seok Kim,
- You-Jin Ji,
- Ki-Hyun Kim,
- Ji-Eun Kang,
- Albert Rogers Ellingboe and
- Geun Young Yeom
Low-hydrogen-containing amorphous silicon (a-Si) was deposited at a low temperature of 80 °C using a very high frequency (VHF at 162 MHz) plasma system with multi-split electrodes. Using the 162 MHz VHF plasma system, a high deposition rate of a-...