Search Results (5)

The current study focuses on one-dimensional (1D) deformation in an excited microelongated semiconductor medium impacted by optoelectronics with exponential laser-pulsed heat. Diffusion effect is considered in a photothermal problem of a semiconducting media. Microelongated optoelectronics and a broad variety of concepts have been introduced. Appropriate solutions to a set of microelongated photothermal diffusion differential equations have been found. The homogeneous (thermal and mechanical) and isotropic characteristics of the medium are thought to be in the $x$-direction, including coupled diffusion equations. The linear photo-thermoelasticity (PTE) theory of semiconductors is used to describe thermo-elastodiffusive waves. As a case study, the developed theoretical framework may be used to explore the microelongation-photo-thermoelastic problem in a semiconductor medium caused by the laser pulse. The analytical linear solutions for the main quantities during thermoelastic (TD) and electronic (ED) deformation are obtained using Laplace transforms for dimensionless quantities. To obtain exact expressions of the important physical variables according to certain boundary surface conditions, numerical approximations solutions of the fundamental relevant relations are performed in the Laplace inverse time domain. To describe the wave propagation of the physical fields graphically, the computational results for silicon (Si) semiconductor material are derived using several cases of thermal memory and microelongation factors. Full article

The main goal of this research is to provide a novel model that describes an optically heated layer of an excited non-local microelongated semiconductor material. In a rotating field, the model is examined as the photo-excitation processes occur. The model presents the microelongation scalar function, which describes the microelement processes according to the micropolar-thermoelasticity theory. The model analyses the interaction situation between optical-thermomechanical waves under the impact of rotation parameters when the microelongation parameters are taken into consideration according to the photo-thermoelasticity theory. During the electronic and thermoelastic deformation, the fundamental governing equations were obtained in dimensionless form, and they were investigated using the harmonic wave methodology. Two-dimensional general solutions for the fundamental fields of an isotropic, homogeneous, and linear non-local microelongated semiconductor medium are derived (2D). The free surface of the medium is subjected to several conditions to produce complete solutions due to the laser pulse. The physical properties of silicon (Si) material are used to show numerical modeling of the main fields. Some comparisons are made and graphically shown under the impact of various relaxation time and rotational parameters. Full article

This work focuses on presenting a novel model describing a layer of an excited microelongated semiconductor material. During the photo-excitation processes, the model is investigated in a rotational field. The model introduced the microelongation scalar function, which describes the microelement processes according to the micropolar-thermoelasticity theory. The model studies the interaction case between optical-thermo-mechanical waves under the effect of rotation parameters when the microelongation parameters are taken into consideration according to the photo-thermoelasticity theory. The main governing equations have been taken in a dimensionless form during the electronic and thermoelastic deformation and they have been studied under the harmonic wave technique. The general solutions of the basic fields of isotropic, homogeneous, and linear microelongated semiconductor medium are obtained in two dimensions (2D). Many conditions are taken at the free surface of the medium to obtain the complete solutions. The physical parameters of silicon (Si) are used to illustrate the numerical simulation of the main fields. Several comparisons were performed and illustrated graphically under the influence of different parameters of relaxation time and rotation. Full article

A theoretical novel model is investigated that describes the dynamic effects of the microelongation processes of an exciting semiconductor medium. The influence of the magnetic field for the optically excited medium is taken into consideration according to the photothermal transport characteristics. The governing equations were derived during the electronic (ED) and thermoelastic (TED) deformation processes when the microelongation parameters of the semiconductor medium were taken into account. The interference between thermal-magnetic-microelongat-plasma-mechanical waves is investigated. The dimensionless expressions are utilized to solve the main equations according to the harmonic wave technique in two-dimensional (2D) deformation. The complete solutions of the expressions of the physical field were obtained when some conditions were taken on the outer semiconductor surface. The theoretical microelongated semiconductor model in this investigation was checked by comparing it with some previous studies. The numerical simulation for the main physical field distributions is graphically displayed when the silicon (Si) material is used. The impact of various factors such as the magnetic field, thermal memory effect, and microelongation on the wave propagations for main fields was discussed. Full article

A theoretical analysis of the dynamic impacts of a novel model in the microelongated-stimulated semiconductor medium is investigated. The influence of the magnetic field of the optically excited medium is taken into consideration according to the photothermal transport processes. The governing equations were created during the electronic (ED) and thermoelastic (TED) deformation processes. Thermal conductivity of the semiconductor microelongation medium is taken as temperature dependent. The interaction of thermal, microelongate, plasma, and mechanical waves is examined. Dimensionless formulae are used to solve the main equations in two dimensions (2D) using the harmonic wave method. The physical field equations have complete solutions when some conditions are applied to the semiconductor surface. The theoretical microelongated semiconductor model employed in this experiment was confirmed by comparing it to certain earlier studies. The numerical simulation for the principal physical field distributions is graphically displayed when silicon (Si) material is employed. The topic of the discussion was the impact of several factors, such as the magnetic field, thermal memory, and microelongation, on the propagation of waves for major fields. Full article