Search Results (7)

In this study, a controllable equal-gap large-area silicon drift detector (L-SDD) is designed. The surface leakage current is reduced by reducing the SiO₂-Si interface through the new controllable equal-gap design. The design of the equal gap also solves the problem whereby the gap widens due to the larger detector size in the previous SDD design, which leads to a large invalid area of the detector. In this paper, a spiral hexagonal equal-gap L-SDD of 1 cm radius is selected for design calculation, and we implement 3D modeling and simulation of the device. The simulation results show that the internal potential gradient distribution of the L-SDD is uniform and forms a drift electric field, with the direction of electron drift pointing towards the collecting anode. The L-SDD has an excellent electron drift channel inside, and this article also analyzes the electrical performance of the drift channel to verify the correctness of the design method of the L-SDD. Full article

In our previous studies, the silicon drift detector (SDD) structure with a constant spiral ring cathode gap (g) and a given surface electric field has been partially investigated based on the physical model that gives an analytical solution to the integrals in the calculations. Those results show that the detector has excellent electrical characteristics with a very homogeneous carrier drift electric field. In order to cope with the implementation of the theoretical approach with a complete set of technical parameters, this paper performs different theoretical algorithms for the technical implementation of the detector performance using the Taylor expansion method to construct a model for cases where the parameter “j” is a non-integer, approximating the solution with finite terms. To verify the accuracy of this situation, we performed a simulation of the relevant electrical properties using the Sentaurus TCAD tool 2018. The electrical properties of the single and double-sided detectors are first compared, and then the effects of different equal gaps g (g = 10 μm, 20 μm, and 25 μm, respectively) on the electrical properties of the double-sided detectors are analyzed and demonstrated. By analyzing and comparing the electrical characteristics data from the simulation results, we can show that the double-sided structure has a larger transverse drift electric field, which improves the spatial position resolution as well as the response speed. The effect of the gap size on the electrical characteristics of the detector is also analyzed by analyzing three different gap bifacial detectors, and the results show that a 10 μm equal gap is the optimal design. Such results can be used in applications requiring large-area SDD, such as the pulsar X-ray autonomous navigation. in the future to provide navigation and positioning space services for spacecraft deep-space exploration. Full article

The 3D electrode silicon detector eliminates the limit of chip thickness, so it can reduce the electrode spacing (small area) and effectively improve the radiation hardness. In order to expand the application range of the 3D electrode detector, we first propose a 3D large-area silicon detector with a large sensitive volume, and realize multiple floating rings on the upper and lower surfaces of the detector. Due to the influence of different charge states and energy levels in the Si-SiO₂ interface system, the top and bottom of the 3D P+ electrode are more prone to avalanche breakdown in the 3D large-area detector before the detector is completely depleted or the carrier saturation drift velocity is reached. Moreover, the electric field distribution becomes very uneven under the influence of the oxide charge, resulting in non-equilibrium carriers that cannot drift in the optimal path parallel to the detector surface. In this paper, the effect of floating rings on the performance of a 3D large-area silicon detector is studied by TCAD simulation. It can increase avalanche breakdown voltage by 14 times in a non-irradiated environment, and can work safely in a moderate irradiated environment. The charge collection efficiency can be effectively improved by optimizing the drift path. Full article

Nowadays, radon gas exposure is considered one of the main health concerns for the population because, by carrying about half the total dose due to environmental radioactivity, it is the second cause of lung cancer after smoking. Due to a relatively long half-life of 3.82 days, the chemical inertia and since its parent Ra-226 is largely diffuse on the earth’s crust and especially in the building materials, radon can diffuse and potentially saturate human habitats, with a concentration that can suddenly change during the 24 h day depending on temperature, pressure, and relative humidity. For such reasons, ‘real-time’ measurements performed by an active detector, possibly of small dimensions and a handy configuration, can play an important role in evaluating the risk and taking the appropriate countermeasures to mitigate it. In this work, a novel algorithm for pattern recognition was developed to exploit the potentialities of silicon active detectors with a pixel matrix structure to measure radon through the α emission, in a simple measurement configuration, where the device is placed directly in air with no holder, no collection filter or electrostatic field to drift the radon progenies towards the detector active area. This particular measurement configuration (dubbed as bare) requires an α/β-discrimination method that is not based on spectroscopic analysis: as the gas surrounds the detector the α particles are emitted at different distances from it, so they lose variable energy amount in air depending on the traveled path-length which implies a variable deposited energy in the active area. The pixels matrix structure allows overcoming this issue because the interaction of α, β and γ particles generate in the active area of the detector clusters (group of pixels where a signal is read) of different shape and energy dispersion. The novel algorithm that exploits such a phenomenon was developed using a pixelated silicon detector of the TimePix family with a compact design. An α (Am-241) and a β (Sr-90) source were used to calibrate the algorithm and to evaluate its performances in terms of β rejection capability and α recognition efficiency. Successively, the detector was exposed to different radon concentrations at the ENEA-INMRI radon facility in ‘bare’ configuration, in order to check the linearity of the device response over a radon concentration range. The results for this technique are presented and discussed, highlighting the potential applications especially the possibility to exploit small and handy detectors to perform radon active measurements in the simplest configuration. Full article

A large-area silicon drift detectors (SDDs) system has been developed by the SIDDHARTA-2 collaboration for high precision light kaonic atom X-ray spectroscopy at the DA$\mathrm{\Phi }$NE collider of Istituto Nazionale di Fisica Nucleare—Laboratori Nazionali di Frascati. The SDDs’ geometry and electric field configuration, combined with their read-out electronics, make these devices suitable for performing high precision light kaonic atom spectroscopy measurements in the background of the DA$\mathrm{\Phi }$NE collider. This work presents the spectroscopic response of the SDDs system during the first exotic atoms run of SIDDHARTA-2 with kaonic helium, a preliminary to the kaonic deuterium data taking campaign. The SIDDHARTA-2 spectroscopic system has good energy resolution and a 2 μs timing window which rejects the asynchronous events, scaling the background by a factor of ${10}^{-5}$. The results obtained for the first exotic atoms run of SIDDHARTA-2 prove this system to be ready to perform the challenging kaonic deuterium measurement. Full article

In this paper, we described a method of double-sided diffusion and drift of lithium-ions into monocrystalline silicon for the formation of the large-sized, p-i-n structured Si(Li) radiation detectors. The p-i-n structure is a p-n junction with a doped region, where the “i-region” is between the n and the p layers. A well-defined i-region is usually associated with p or n layers with high resistivities. The p-i-n structure is mostly used in diodes and in some types of semiconductor radiation detectors. The uniqueness of this method is that, in this method, the processes of diffusion and drift of lithium-ions, which are the main processes in the formation of Si(Li) p-i-n structures, are produced from both flat sides of cylindrical-shaped monocrystalline silicon, at optimal temperature (T = 420 °C) conditions of diffusion, and subsequently, with synchronous supply of temperature (from 55 to 100 °C) and reverse bias voltage (from 70 to 300 V) during drift of lithium-ions into silicon. Thus, shortening the manufacturing time of the detector and providing a more uniform distribution of lithium-ions in the crystal volume. Since, at present, the development of manufacturing of large-sized Si(Li) detectors is hindered due to difficulties in obtaining a uniformly compensated large area and time-consuming manufacturing process, the proposed method may open up new possibilities in detector manufacturing. Full article

Novel, large-area silicon drift detectors (SDDs) have been developed to perform precision measurements of kaonic atom X-ray spectroscopy, for the study the $\overline{K}$ N strong interaction in the low-energy regime. These devices have special geometries, field configurations and read-out electronics, resulting in excellent performances in terms of linearity, stability and energy resolution. In this work the SDDs energy response in the energy region between 4000 eV and 12,000 eV is reported, revealing a stable linear response within 1 eV and good energy resolution. Full article