Search Results (10)

This paper reports the field emission (FE) current stability of a diamond nanowire (DNW) array. Assembled with a silicon anode with a 1.03 μm gap, the FE properties, as well as the current stability of the DNW cathode, were systematically evaluated in a vacuum test system under different vacuum degrees, current densities, and atmospheres. Experiments demonstrate that lower pressure and current density can improve FE properties and current stability. In addition, compared to air and compressed air, DNWs exhibit higher FE properties and current stability in N₂. DNWs achieve a remarkably low turn-on field of 1.65 V/μm and a high current density of 265.38 mA/cm². Notably, they demonstrate merely 0.70% current fluctuation under test conditions of 1.2 × 10⁻⁴ Pa and 0.1 mA/cm². Additionally, based on the Fowler–Nordheim theory, the change in work function after gas adsorption was analyzed, and the noise generation mechanism was derived from the noise power spectrum. The current exponent is determined as 1.94, while the frequency exponent ranges from 0.92 to 1.32, confirming that the dominant noise mechanism in DNWs arises from surface work function fluctuations due to the adsorption and desorption of residual gas. Full article

In this study, a boron-doped diamond nanowire array (BDD-NWA)-based electrode is prepared by using a microwave plasma chemical vapor deposition system and treated with inductively coupled plasma reactive ion etching. The BDD-NWA electrode is used for trace detection of methylene blue, which has a wide linear range of 0.04–10 μM and a low detection limit of 0.72 nM. Both the superhydrophilicity (contact angle ~0°) and the dense nanowire array’s structure after the etching process improve the sensitivity of the electrochemical detection compared to the pristine BDD. In addition, the electrode shows great repeatability (peak current fluctuation range of −3.3% to 2.9% for five detection/cleaning cycles) and stability (peak current fluctuation range of −5.3% to 6.3% after boiling) due to the unique properties of diamonds (mechanical and chemical stability). Moreover, the BDD-NWA electrode achieves satisfactory recoveries (93.8%–107.5%) and real-time monitoring in tap water. Full article

Carbon nanomaterials are in high demand owing to their exceptional physical and chemical properties. This study employed a mixture of CH₄, H₂, and N₂ to create carbon nanostructures on a single-crystal diamond using microwave plasma chemical vapor deposition (MPCVD) under high-power conditions. By controlling the substrate surface and nitrogen flow rate, carbon nanowires, carbon nanotubes, and carbon pompons could be selectively deposited. The results obtained from OES, SEM, TEM, and Raman spectroscopy revealed that the nitrogen flow rate and substrate surface conditions were crucial for the growth of carbon nanostructures. The changes in the plasma shape enhanced the etching effect, promoting the growth of carbon pompons. The CN and C₂ groups play vital catalytic roles in the formation of carbon nanotubes and nanowires, guiding the precipitation and composite growth of carbon atoms at the interface between the Mo metal catalysts and diamond. This study demonstrated that heterostructures of diamond–carbon nanomaterials could be produced under high-power conditions, offering a new approach to integrating diamond and carbon nanomaterials. Full article

We report silicon nanowire (SiNW) growth with a novel Cu-In bimetallic catalyst using a plasma-enhanced chemical vapor deposition (PECVD) method. We study the structure of the catalyst nanoparticles (NPs) throughout a two-step process that includes a hydrogen plasma pre-treatment at 200 °C and the SiNW growth itself in a hydrogen-silane plasma at 420 °C. We show that the H₂-plasma induces a coalescence of the Cu-rich cores of as-deposited thermally evaporated NPs that does not occur when the same annealing is applied without plasma. The SiNW growth process at 420 °C induces a phase transformation of the catalyst cores to Cu₇In₃; while a hydrogen plasma treatment at 420 °C without silane can lead to the formation of the Cu₁₁In₉ phase. In situ transmission electron microscopy experiments show that the SiNWs synthesis with Cu-In bimetallic catalyst NPs follows an essentially vapor-solid–solid process. By adjusting the catalyst composition, we manage to obtain small-diameter SiNWs—below 10 nm—among which we observe the metastable hexagonal diamond phase of Si, which is predicted to have a direct bandgap. Full article

The experimental data in the literature concerning the Paramagnetic Meissner Effect (PME) or also called Wohlleben effect are reviewed with the emphasis on the PME exhibited by metallic, s-wave superconductors. The PME was observed in field-cool cooling (FC-C) and field-cool warming (FC-W) $m\left(T\right)$-measurements on Al, Nb, Pb, Ta, in compounds such as, e.g., NbSe${}_2$, In-Sn, ZrB${}_{12}$, and others, and also in MgB${}_2$, the metallic superconductor with the highest transition temperature. Furthermore, samples with different shapes such as crystals, polycrystals, thin films, bi- and multilayers, nanocomposites, nanowires, mesoscopic objects, and porous materials exhibited the PME. The characteristic features of the PME, found mainly in Nb disks, such as the characteristic temperatures $T_1$ and $T_p$ and the apparative details of the various magnetic measurement techniques applied to observe the PME, are discussed. We also show that PME can be observed with the magnetic field applied parallel and perpendicular to the sample surface, that PME can be removed by abrading the sample surface, and that PME can be introduced or enhanced by irradiation processes. The PME can be observed as well in magnetization loops (MHLs, $m\left(H\right)$) in a narrow temperature window $T_p<T_c$, which enables the construction of a phase diagram for a superconducting sample exhibiting the PME. We found that the Nb disks still exhibit the PME after more than 20 years, and we present the efforts of magnetic imaging techniques (scanning SQUID microscopy, magneto-optics, diamond nitrogen-vacancy (NV)-center magnetometry, and low-energy muon spin spectroscopy, (LE-$\mu$SR)). Various attempts to explain PME behavior are discussed in detail. In particular, magnetic measurements of mesoscopic Al disks brought out important details employing the models of a giant vortex state and flux compression. Thus, we consider these approaches and demagnetization effects as the base to understand the formation of the paramagnetic signals in most of the materials investigated. New developments and novel directions for further experimental and theoretical analysis are also outlined. Full article

The aim of this review is to provide a survey of the recent advances and the main remaining challenges related to the ultrananocrystalline diamond (UNCD) nanowires and other nanostructures which exhibit excellent capability as the core components for many diverse novel sensing devices, due to the unique material properties and geometry advantages. The boron or nitrogen doping introduced in the gas phase during deposition promotes p-type or n-type conductivity. With the establishment of the UNCD nanofabrication techniques, more and more nanostructure-based devices are being explored in measuring basic physical and chemical parameters via classic and quantum methods, as exemplified by gas sensors, ultraviolet photodetectors, piezoresistance effect-based devices, biological applications and biosensors, and nitrogen-vacancy color center-based magnetic field quantum sensors. Highlighted finally are some of the remaining challenges and the future outlook in this area. Full article

Silicon nanowires are widely used for sensing applications due to their outstanding mechanical, electrical, and optical properties. However, one of the major challenges involves introducing silicon-nanowire arrays to a specific layout location with reproducible and controllable dimensions. Indeed, for integration with microscale structures and circuits, a monolithic wafer-level process based on a top-down silicon-nanowire array fabrication method is essential. For sensors in various electromechanical and photoelectric applications, the need for silicon nanowires (as a functional building block) is increasing, and thus monolithic integration is highly required. In this paper, a novel top-down method for fabricating vertically-stacked silicon-nanowire arrays is presented. This method enables the fabrication of lateral silicon-nanowire arrays in a vertical direction, as well as the fabrication of an increased number of silicon nanowires on a finite dimension. The proposed fabrication method uses a number of processes: photolithography, deep reactive-ion etching, and wet oxidation. In applying the proposed method, a vertically-aligned silicon-nanowire array, in which a single layer consists of three vertical layers with 20 silicon nanowires, is fabricated and analyzed. The diamond-shaped cross-sectional dimension of a single silicon nanowire is approximately 300 nm in width and 20 μm in length. The developed method is expected to result in highly-sensitive, reproducible, and low-cost silicon-nanowire sensors for various biomedical applications. Full article

Novel Cd²⁺ ions mediated reproducible hybrid graphite-diamond nanowire (G-DNWs; Cd²⁺-NDS1 NW) growth from 4-Amino-5-phenyl-4H-1,2,4-triazole-3-thiol (S1) functionalized diamond nanoparticles (NDS1) via supramolecular assembly is reported and demonstrated through TEM and AFM images. FTIR, EDX and XPS studies reveal the supramolecular coordination between functional units of NDS1 and Cd²⁺ ions towards NWs growth. Investigations of XPS, XRD and Raman data show the covering of graphite sheath over DNWs. Moreover, HR-TEM studies on Cd²⁺-NDS1 NW confirm the coexistence of less perfect sp² graphite layer and sp³ diamond carbon along with impurity channels and flatten surface morphology. Possible mechanisms behind the G-DNWs growth are proposed and clarified. Subsequently, conductivity of the as-grown G-DNWs is determined through the fabrication of a single Cd²⁺-NDS1 NW device, in which the G-DNW portion L2 demonstrates a better conductivity of 2.31 × 10⁻⁴ mS/cm. In addition, we investigate the temperature-dependent carrier transport mechanisms and the corresponding activation energy in details. Finally, comparisons in electrical resistivities with other carbon-based materials are made to validate the importance of our conductivity measurements. Full article

Over the last decades, carbon-based nanostructures have generated a huge interest from both fundamental and technological viewpoints owing to their physicochemical characteristics, markedly different from their corresponding bulk states. Among these nanostructured materials, carbon nanotubes (CNTs), and more recently graphene and its derivatives, hold a central position. The large amount of work devoted to these materials is driven not only by their unique mechanical and electrical properties, but also by the advances made in synthetic methods to produce these materials in large quantities with reasonably controllable morphologies. While much less studied than CNTs and graphene, diamond nanowires, the diamond analogue of CNTs, hold promise for several important applications. Diamond nanowires display several advantages such as chemical inertness, high mechanical strength, high thermal and electrical conductivity, together with proven biocompatibility and existence of various strategies to functionalize their surface. The unique physicochemical properties of diamond nanowires have generated wide interest for their use as fillers in nanocomposites, as light detectors and emitters, as substrates for nanoelectronic devices, as tips for scanning probe microscopy as well as for sensing applications. In the past few years, studies on boron-doped diamond nanowires (BDD NWs) focused on increasing their electrochemical active surface area to achieve higher sensitivity and selectivity compared to planar diamond interfaces. The first part of the present review article will cover the promising applications of BDD NWS for label-free sensing. Then, the potential use of diamond nanowires as inorganic substrates for matrix-free laser desorption/ionization mass spectrometry, a powerful label-free approach for quantification and identification of small compounds, will be discussed. Full article

Tip-enhanced Raman spectroscopy (TERS) is used to investigate the influence of strains in isolated and overlapping silicon nanowires prepared by chemical etching of a (100) silicon wafer. An atomic force microscopy tip made of nanocrystalline diamond coated with a thin layer of silver is used in conjunction with an excitation wavelength of 532 nm in order to probe the first order optical phonon mode of the [100] silicon nanowires. The frequency shift and the broadening of the silicon first order phonon are analyzed and compared to the topographical measurements for distinct configuration of nanowires that are disposed in straight, bent or overlapping configuration over a microscope coverslip. The TERS spatial resolution is close to the topography provided by the nanocrystalline diamond tip and subtle spectral changes are observed for different nanowire configurations. Full article