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Keywords = black phosphorus analogs

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16 pages, 6532 KiB  
Review
Lead Monoxide Nanostructures for Nanophotonics: A Review
by Hongyan Chen, Mengke Wang and Weichun Huang
Nanomaterials 2023, 13(12), 1842; https://doi.org/10.3390/nano13121842 - 12 Jun 2023
Cited by 5 | Viewed by 2314
Abstract
Black-phosphorus-analog lead monoxide (PbO), as a new emerging 2D material, has rapidly gained popularity in recent years due to its unique optical and electronic properties. Recently, both theoretical prediction and experimental confirmation have revealed that PbO exhibits excellent semiconductor properties, including a tunable [...] Read more.
Black-phosphorus-analog lead monoxide (PbO), as a new emerging 2D material, has rapidly gained popularity in recent years due to its unique optical and electronic properties. Recently, both theoretical prediction and experimental confirmation have revealed that PbO exhibits excellent semiconductor properties, including a tunable bandgap, high carrier mobility, and excellent photoresponse performance, which is undoubtedly of great interest to explore its practical application in a variety of fields, especially in nanophotonics. In this minireview, we firstly summarize the synthesis of PbO nanostructures with different dimensionalities, then highlight the recent progress in the optoelectronics/photonics applications based on PbO nanostructures, and present some personal insights on the current challenges and future opportunities in this research area. It is anticipated that this minireview can pave the way to fundamental research on functional black-phosphorus-analog PbO-nanostructure-based devices to meet the growing demands for next-generation systems. Full article
(This article belongs to the Special Issue Functionalized Hybridization for Next-Generation Nanophotonic Devices)
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12 pages, 3387 KiB  
Article
Negative Magnetoresistance in Hopping Regime of Lightly Doped Thermoelectric SnSe
by Marija Zorić, Naveen Singh Dhami, Kristian Bader, Peter Gille, Ana Smontara and Petar Popčević
Materials 2023, 16(7), 2863; https://doi.org/10.3390/ma16072863 - 4 Apr 2023
Cited by 1 | Viewed by 2229
Abstract
Semiconducting SnSe, an analog of black phosphorus, recently attracted great scientific interest due to a disputed report of a large thermoelectric figure of merit, which has not been reproduced subsequently. Here we concentrate on the low-temperature ground state. To gain a better understanding [...] Read more.
Semiconducting SnSe, an analog of black phosphorus, recently attracted great scientific interest due to a disputed report of a large thermoelectric figure of merit, which has not been reproduced subsequently. Here we concentrate on the low-temperature ground state. To gain a better understanding of the system, we present magneto-transport properties in high-quality single crystals of as-grown, lightly doped SnSe down to liquid helium temperatures. We show that SnSe behaves as a p-type doped semiconductor in the vicinity of a metal-insulator transition. Electronic transport at the lowest temperatures is dominated by the hopping mechanism. Negative magnetoresistance at low fields is well described by antilocalization, while positive magnetoresistance at higher fields is consistent with the shrinkage of localized impurity wavefunctions. At higher temperatures, a dilute metallic regime is realized where elusive T2 and B2 resistivity dependence is observed, posing a challenge to theoretical comprehension of the underlying physical mechanism. Full article
(This article belongs to the Special Issue New Insights into Metal–Insulator Transitions)
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