Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 

Saved Queries

Sign in to use this feature.

Search Filter Reset All

Years

Between: -

Subjects

remove_circle_outline
Add Subjects Reset
Select Subjects

Journals

remove_circle_outline
Add Journals Reset
Select Journals

Article Types

remove_circle_outline
Add Article Types Reset
Select Article Types

Countries / Regions

remove_circle_outline
remove_circle_outline
Add Countries / Regions Reset
Select Countries / Regions
Update Search
share announcement

Search Results (1)

Search Parameters:
Keywords = ZrAlOx-PVP

Order results
Result details
Results per page
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
16 pages, 6029 KB  
Article
Low-Temperature ZrAlOx-PVP Hybrid Dielectrics with Crosslinking-Regulated Leakage Suppression for Flexible IGZO TFTs
by Yufei Yue, Honglong Ning, Xuecong Fang, Dongxiang Luo, Chi Yuan, Haitao Zhu, Xu Zhou, Xiaojie Li, Weiguang Xie, Rihui Yao and Junbiao Peng
Inorganics 2026, 14(6), 161; https://doi.org/10.3390/inorganics14060161 - 12 Jun 2026
Abstract
Flexible oxide electronics require dielectric layers that combine low-temperature processability, low leakage current, high capacitance density, and mechanical reliability. In this work, we prepared ZrAlOx-PVP hybrid dielectric films through a low-temperature self-combustion solution process at 180 °C and systematically investigated the [...] Read more.
Flexible oxide electronics require dielectric layers that combine low-temperature processability, low leakage current, high capacitance density, and mechanical reliability. In this work, we prepared ZrAlOx-PVP hybrid dielectric films through a low-temperature self-combustion solution process at 180 °C and systematically investigated the effect of PVP doping (0–2 wt%). The results show that PVP promotes the formation of M-O-C related bonding environments, suggesting the construction of an organic–inorganic crosslinked structure. Moderate PVP incorporation effectively suppresses leakage pathways, whereas excessive PVP induces polymer aggregation and trap-assisted conduction. Among all samples, the film on flexible PI (polyimide) with a PVP doping concentration of 0.5 wt% exhibits the best overall performance, with a leakage current as low as 1.89 × 10−8 A/cm2 at 1 MV/cm, a dielectric constant of 8.88. After static bending at a radius of 20 mm, the film maintains stable dielectric behavior, indicating improved stress tolerance. Flexible IGZO TFT fabricated with the optimized dielectric shows a mobility of 11.84 cm2 V−1 s−1, a threshold voltage of 0.48 V, and a subthreshold swing of 0.24 V dec−1 before bending. This work demonstrates that moderate PVP crosslinking provides an effective balance between defect suppression and stress relaxation, offering a practical interface-engineering strategy for low-temperature flexible high-k dielectrics. Full article
(This article belongs to the Special Issue Multifunctional Composites and Hybrid Materials)
►▼ Show Figures

Graphical abstract

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying article 1-50 on page 1 of 1.
Back to TopTop