Search Results (8)

Light detection and ranging (Lidar) is a key enabling technology for autonomous vehicles and drones. Its emerging implementations are based on photonic integrated circuits (PICs) and optical phased arrays (OPAs). In this work, we introduce a novel approach to the design of OPA Lidar antennas based on Si₃N₄ grating couplers. The well-established TriPleX platform and the asymmetric double stripe waveguide geometry with full etching are employed, ensuring low complexity and simple fabrication combined with the low-loss advantages of the platform. The design study aims to optimize the performance of the grating coupler-based radiators as well as the OPA, thus enhancing the overall capabilities of Si₃N₄-based Lidar. Uniform and non-uniform grating structures are considered, achieving θ and φ angle divergences of 0.9° and 32° and 0.54° and 25.41°, respectively. Also, wavelength sensitivity of 7°/100 nm is achieved. Lastly, the fundamental OPA parameters are investigated, and 35 dBi of peak directivity is achieved for an eight-element OPA. Full article

Notes on fits of analytic estimations, 2D finite element method (FEM), and 3D FEM simulations to measurements of the cathodoluminescence (CL) and to the degree of polarization (DOP) of the CL from the top surface of a $\left(100\right)$ GaAs substrate with a 6.22 $\mathsf{\mu }$m wide SiN stripe are presented. Three interesting features are found in the DOP of CL data. Presumably these features are noticeable owing to the spatial resolution of the CL measurement system. Comparisons of both strain and spatial resolutions obtained by CL and photoluminescence (PL) systems are presented. The width of the central feature in the measured DOP is less than the width of the SiN, as measured from the CL. This suggests horizontal cracks or de-laminations into each side of the SiN of about 0.7 $\mathsf{\mu }$m. In addition, it appears that deformed regions of widths of ≈1.5 $\mathsf{\mu }$m and adjacent to the SiN must exist to explain some of the features. Full article

Measurements of the cathodoluminescence (CL) and the degree of polarization (DOP) of (CL) from the facet of a GaAs substrate and in the vicinity of a SiN stripe are reported and analyzed. The deformation induced by the SiN stripe is estimated by fitting the measured DOP to 3D finite element method (FEM) simulations. The deformation is found to be more complex than an initial condition of biaxial stress in the SiN. A ratio of fit coefficients suggests that the dependence of DOP on strain is described by equations presented in Appl. Opt. 59, 5506–5520 (2020). These equations give a DOP that is either proportional to a weighted difference of the principal components of strain in the measurement plane, or proportional to the shear strain in the measurement plane, depending on the chosen orientation of the measurement axes. Full article

We report on the epitaxial lateral overgrowth (ELO) of high-quality AlN on stripe-patterned Si(111) substrates with various trench widths. By narrowing down the trench and ridge widths of patterned Si substrates, crack-free, 6-micrometer-thick, high-quality AlN films on Si substrates were produced. The full-width-at-half-maximum values of the X-ray-diffraction rocking curves for the AlN (0002) and (10$\overline{1}2$) planes were as low as 260 and 374 arcsec, respectively, corresponding to a record low dislocation density of 1.3 × 10⁹ cm⁻². Through the combination of a micro-Raman study and the X-ray diffraction analysis, it was found that narrowing the stripe width from 5 μm to 3 μm can reduce the vertical growth thickness before coalescence, resulting in a large decrease in the internal tensile stress and tilt angle, and, therefore, better suppression in the cracks and dislocations of the ELO–AlN. This work paves the way for the fabrication of high-performance Al(Ga)N-based thin-film devices such as ultraviolet light-emitting diodes and AlN bulk acoustic resonators grown on Si. Full article

Novel 1.7-kV 4H-SiC trench-gate MOSFETs (TMOSFETs) with a grid pattern and a smaller specific on-resistance are proposed and demonstrated via numerical simulations. The proposed TMOSFETs provide a reduced cell pitch compared with TMOSFETs with square and stripe patterns. Although TMOSFETs with a grid pattern reduce the channel area by approximately 10%, the cell density is increased by approximately 35%. Consequently, the specific on-resistance of the grid pattern is less than that of the square and stripe patterns. The forward blocking characteristics of the grid pattern are increased by the reduced impact ionization rate at the P/N junction. As a result, the figure-of-merit (FOM) of the grid pattern is increased by approximately 33%. Full article

Most cytoplasmic-replicating negative-strand RNA viruses (NSVs) initiate genome transcription by cap snatching. The source of host mRNAs from which the cytoplasmic NSVs snatch capped-RNA leader sequences has remained elusive. Earlier reports have pointed towards cytoplasmic-RNA processing bodies (P body, PB), although several questions have remained unsolved. Here, the nucleocapsid (N) protein of plant- and animal-infecting members of the order Bunyavirales, in casu Tomato spotted wilt virus (TSWV), Rice stripe virus (RSV), Sin nombre virus (SNV), Crimean-Congo hemorrhagic fever virus (CCHFV) and Schmallenberg virus (SBV) have been expressed and localized in cells of their respective plant and animal hosts. All N proteins localized to PBs as well as stress granules (SGs), but extensively to docking stages of PB and SG. TSWV and RSV N proteins also co-localized with Ran GTPase-activating protein 2 (RanGAP2), a nucleo-cytoplasmic shuttling factor, in the perinuclear region, and partly in the nucleus when co-expressed with its WPP domain containing a nuclear-localization signal. Upon silencing of PB and SG components individually or concomitantly, replication levels of a TSWV minireplicon, as measured by the expression of a GFP reporter gene, ranged from a 30% reduction to a four-fold increase. Upon the silencing of RanGAP homologs in planta, replication of the TSWV minireplicon was reduced by 75%. During in vivo cap-donor competition experiments, TSWV used transcripts destined to PB and SG, but also functional transcripts engaged in translation. Altogether, the results implicate a more complex situation in which, besides PB, additional cytoplasmic sources are used during transcription/cap snatching of cytoplasmic-replicating and segmented NSVs. Full article

The design of modern semiconductor devices often requires the fabrication of three-dimensional (3D) structures to integrate microelectronic components with photonic, micromechanical, or sensor systems within one semiconductor substrate. It is a technologically challenging task, as a strictly defined profile of the device structure is obligatory. This can be achieved either by chemical etching or selective deposition on a masked substrate. In this paper, the growth uniformity of AlGaN/GaN heterostructures during selective-area metalorganic vapour-phase epitaxy (SA-MOVPE) was studied. Such structures are typically used in order to fabricate high-electron-mobility transistors (HEMT). The semiconductor material was deposited through 200 μm long stripe-shaped open windows in a SiO₂ mask on GaN/sapphire templates. The window width was varied from 5 μm to 160 μm, whereas mask width separating particular windows varied from 5 μm to 40 μm. The experiment was repeated for three samples differing in GaN layer thickness: 150 nm, 250 nm, and 500 nm. Based on theoretical models of the selective growth, a sufficiently uniform thickness of epitaxially grown AlGaN/GaN heterostructure has been achieved by selecting the window half-width that is smaller than the diffusion length of the precursor molecules. A Ga diffusion length of 15 μm was experimentally extracted by measuring the epitaxial material agglomeration in windows in the dielectric mask. Measurements were conducted while using optical profilometry. Full article

Si doped diamond-like carbon (Si-DLC) films were deposited on nitrile-butadiene rubber (NBR), and the effects of deposition parameters on the mechanical and tribological properties of an Si-DLC top layer on NBR were investigated. Then, the sample with the best performance is selected to investigate its tribological behaviors and mechanism under different contact loads. The results show that the growth rate and the doped Si content are also decreased with increasing the CH₄ flow rate. The Si atom exists in the form of Si-C bonds at low CH₄ flow rate (≤40 sccm) and Si-C + Si-O-C bonds at high CH₄ flow rate (≥60 sccm). Furthermore, the sp³ content increases monotonously, while the hardness and H³/E² ratio firstly decreases and then increases. As a result, the friction and wear behaviors are in line with the change trend of the hardness. The lowest friction coefficient (~0.19) and a slight wear were achieved for the Si-DLC3 film under the relatively high load of 3 N. The tribological results indicate that the friction coefficient and wear increase monotonously with the increase of load, which is mainly attributed to the brittle fragmentation of films at a higher load, and thus a high strength and super toughness DLC films should be needed. Furthermore, the friction and wear behaviors of samples depend critically on its surface topography, and the wear is lower when the friction direction is parallel to the stripes. Full article