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Keywords = α-IGZO

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12 pages, 3882 KB  
Article
The Enhanced Performance of Oxide Thin-Film Transistors Fabricated by a Two-Step Deposition Pressure Process
by Mingjie Zhao, Jiahao Yan, Yaotian Wang, Qizhen Chen, Rongjun Cao, Hua Xu, Dong-Sing Wuu, Wan-Yu Wu, Feng-Min Lai, Shui-Yang Lien and Wenzhang Zhu
Nanomaterials 2024, 14(8), 690; https://doi.org/10.3390/nano14080690 - 17 Apr 2024
Cited by 9 | Viewed by 2560
Abstract
It is usually difficult to realize high mobility together with a low threshold voltage and good stability for amorphous oxide thin-film transistors (TFTs). In addition, a low fabrication temperature is preferred in terms of enhancing compatibility with the back end of line of [...] Read more.
It is usually difficult to realize high mobility together with a low threshold voltage and good stability for amorphous oxide thin-film transistors (TFTs). In addition, a low fabrication temperature is preferred in terms of enhancing compatibility with the back end of line of the device. In this study, α-IGZO TFTs were prepared by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The channel was prepared under a two-step deposition pressure process to modulate its electrical properties. X-ray photoelectron spectra revealed that the front-channel has a lower Ga content and a higher oxygen vacancy concentration than the back-channel. This process has the advantage of balancing high mobility and a low threshold voltage of the TFT when compared with a conventional homogeneous channel. It also has a simpler fabrication process than that of a dual active layer comprising heterogeneous materials. The HiPIMS process has the advantage of being a low temperature process for oxide TFTs. Full article
(This article belongs to the Special Issue Nanoelectronics: Materials, Devices and Applications)
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10 pages, 3183 KB  
Article
Thermal Conductivity of Nano-Crystallized Indium-Gallium-Zinc Oxide Thin Films Determined by Differential Three-Omega Method
by Rauf Khan, Michitaka Ohtaki, Satoshi Hata, Koji Miyazaki and Reiji Hattori
Nanomaterials 2021, 11(6), 1547; https://doi.org/10.3390/nano11061547 - 11 Jun 2021
Cited by 6 | Viewed by 4377
Abstract
The temperature dependence thermal conductivity of the indium-gallium-zinc oxide (IGZO) thin films was investigated with the differential three-omega method for the clear demonstration of nanocrystallinity. The thin films were deposited on an alumina (α-Al2O3) substrate by direct current (DC) [...] Read more.
The temperature dependence thermal conductivity of the indium-gallium-zinc oxide (IGZO) thin films was investigated with the differential three-omega method for the clear demonstration of nanocrystallinity. The thin films were deposited on an alumina (α-Al2O3) substrate by direct current (DC) magnetron sputtering at different oxygen partial pressures ([PO2] = 0%, 10%, and 65%). Their thermal conductivities at room temperature were measured to be 1.65, 1.76, and 2.58 Wm−1K−1, respectively. The thermal conductivities decreased with an increase in the ambient measurement temperature. This thermal property is similar to that of crystalline materials. Electron microscopy observations revealed the presence of nanocrystals embedded in the amorphous matrix of the IGZO films. The typical size of the nanocrystals was approximately 2–5 nm with the lattice distance of about 0.24–0.26 nm. These experimental results indicate that the nanocrystalline microstructure controls the heat conduction in the IGZO films. Full article
(This article belongs to the Special Issue Thermal Transport in Nanoscale)
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13 pages, 4322 KB  
Article
Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode
by Kun-Neng Chen, Cheng-Fu Yang, Chia-Ching Wu and Yu-Hsin Chen
Materials 2017, 10(3), 226; https://doi.org/10.3390/ma10030226 - 24 Feb 2017
Cited by 15 | Viewed by 6990
Abstract
We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (α-IGZO/Ag/α-IGZO) triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between [...] Read more.
We investigated the structural, optical, and electrical properties of amorphous IGZO/silver/amorphous IGZO (α-IGZO/Ag/α-IGZO) triple-layer structures that were deposited at room temperature on Eagle XG glass and flexible polyethylene terephthalate substrates through the sputtering method. Thin Ag layers with different thicknesses were inserted between two IGZO layers to form a triple-layer structure. Ag was used because of its lower absorption and resistivity. Field emission scanning electron microscopy measurements of the triple-layer structures revealed that the thicknesses of the Ag layers ranged from 13 to 41 nm. The thickness of the Ag layer had a large effect on the electrical and optical properties of the electrodes. The optimum thickness of the Ag metal thin film could be evaluated according to the optical transmittance, electrical conductivity, and figure of merit of the electrode. This study demonstrates that the α-IGZO/Ag/α-IGZO triple-layer transparent electrode can be fabricated with low sheet resistance (4.2 Ω/□) and high optical transmittance (88.1%) at room temperature without postannealing processing on the deposited thin films. Full article
(This article belongs to the Special Issue Selected Material Related Papers from ICI2016)
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