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Authors = Jinye Ma

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14 pages, 1976 KiB  
Article
The Interfacial Reaction between Amorphous Ni-W-P Coating and Sn-58Bi Solder
by Chenyu Li, Xiaolin Su, Zhongxu Zhang, Haitao Ma, Jinye Yao, Haohao Xia and Yuanbang Zhao
Metals 2024, 14(10), 1107; https://doi.org/10.3390/met14101107 - 26 Sep 2024
Viewed by 1422
Abstract
With the rapid development of the advanced electronic packaging field, the requirements for the connection between solder and Cu substrate are becoming increasingly stringent. Currently, the commonly used Ni-P diffusion barrier layer in the industry lacks long-term reliability, and its resistivity is higher [...] Read more.
With the rapid development of the advanced electronic packaging field, the requirements for the connection between solder and Cu substrate are becoming increasingly stringent. Currently, the commonly used Ni-P diffusion barrier layer in the industry lacks long-term reliability, and its resistivity is higher than that of other substrates. This paper introduces the highly conductive metal element W to modify the binary Ni-P coating and prepares a ternary Ni-W-P coating through electrodeposition to improve this situation. The key parameters for the electrodeposition of ternary Ni-W-P are determined. The isothermal aging reaction of Ni-W-P with Sn-Bi solder at 100 °C was studied, and the results showed that, compared to the conventional Ni-P coating, the Ni-W-P barrier coating with higher W content has a much longer lifespan as a barrier layer and exhibits significantly better electrical conductivity. Additionally, the reaction mechanism between Ni-W-P and the Sn-Bi solder is proposed. This research presents a promising advancement in the development of barrier layers for electronic packaging, potentially leading to more reliable and efficient electronic devices. Introducing tungsten into the Ni-P matrix not only extends the lifespan of the coating but also enhances its electrical performance, making it a valuable innovation for applications requiring high conductivity and durability. This study could guide further investigations into the application of ternary coatings in various electronic components, paving the way for improved designs and materials in the semiconductor industry. Full article
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14 pages, 7278 KiB  
Article
Diffusion Barrier Performance of Ni-W Layer at Sn/Cu Interfacial Reaction
by Jinye Yao, Chenyu Li, Min Shang, Xiangxu Chen, Yunpeng Wang, Haoran Ma, Haitao Ma and Xiaoying Liu
Materials 2024, 17(15), 3682; https://doi.org/10.3390/ma17153682 - 25 Jul 2024
Cited by 3 | Viewed by 1387
Abstract
As the integration of chips in 3D integrated circuits (ICs) increases and the size of micro-bumps reduces, issues with the reliability of service due to electromigration and thermomigration are becoming more prevalent. In the practical application of solder joints, an increase in the [...] Read more.
As the integration of chips in 3D integrated circuits (ICs) increases and the size of micro-bumps reduces, issues with the reliability of service due to electromigration and thermomigration are becoming more prevalent. In the practical application of solder joints, an increase in the grain size of intermetallic compounds (IMCs) has been observed during the reflow process. This phenomenon results in an increased thickness of the IMC layer, accompanied by a proportional increase in the volume of the IMC layer within the joint. The brittle nature of IMC renders it susceptible to excessive growth in small-sized joints, which has the potential to negatively impact the reliability of the welded joint. It is therefore of the utmost importance to regulate the formation and growth of IMCs. The following paper presents the electrodeposition of a Ni-W layer on a Cu substrate, forming a barrier layer. Subsequently, the barrier properties between the Sn/Cu reactive couples were subjected to a comprehensive and systematic investigation. The study indicates that the Ni-W layer has the capacity to impede the diffusion of Sn atoms into Cu. Furthermore, the Ni-W layer is a viable diffusion barrier at the Sn/Cu interface. The “bright layer” Ni2WSn4 can be observed in all Ni-W coatings during the soldering reflow process, and its growth was almost linear. The structure of the Ni-W layer is such that it reduces the barrier properties that would otherwise be inherent to it. This is due to the “bright layer” Ni2WSn4 that covers the original Ni-W barrier layer. At a temperature of 300 °C for a duration of 600 s, the Ni-W barrier layer loses its blocking function. Once the “bright layer” Ni2WSn4 has completely covered the original Ni-W barrier layer, the diffusion activation energy for Sn diffusion into the Cu substrate side will be significantly reduced, particularly in areas where the distortion energy is concentrated due to electroplating tension. Both the “bright layer” Ni2WSn4 and Sn will grow rapidly, with the formation of Cu-Sn intermetallic compounds (IMCs). At temperatures of 250 °C, the growth of Ni3Sn4-based IMCs is controlled by grain boundaries. Conversely, the growth of the Ni2WSn4 layer (consumption of Ni-W layer) is influenced by a combination of grain boundary diffusion and bulk diffusion. At temperatures of 275 °C and 300 °C, the growth of Ni3Sn4-based IMCs and the Ni2WSn4 layer (consumption of Ni-W layer) are both controlled by grain boundaries. The findings of this study can inform the theoretical design of solder joints with barrier layers as well as the selection of Ni-W diffusion barrier layers for use in different soldering processes. This can, in turn, enhance the reliability of microelectronic devices, offering significant theoretical and practical value. Full article
(This article belongs to the Special Issue Advanced Electronic Packaging Technology: From Hard to Soft)
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13 pages, 2863 KiB  
Article
First-Principles Study of Cu Addition on Mechanical Properties of Ni3Sn4-Based Intermetallic Compounds
by Jinye Yao, Li Wang, Shihao Guo, Xiaofu Li, Xiangxu Chen, Min Shang, Haoran Ma and Haitao Ma
Metals 2024, 14(1), 64; https://doi.org/10.3390/met14010064 - 5 Jan 2024
Cited by 1 | Viewed by 1717
Abstract
Ni–Cu under-bump metallisation (UBM) can reduce stress and improve wetting ability in technology for electronic packaging technology advances with three-dimensional integrated circuit (3D IC) devices. The bond between the Sn-based solder and Ni–Cu UBM is affected by the formation of intermetallic compounds (IMCs), [...] Read more.
Ni–Cu under-bump metallisation (UBM) can reduce stress and improve wetting ability in technology for electronic packaging technology advances with three-dimensional integrated circuit (3D IC) devices. The bond between the Sn-based solder and Ni–Cu UBM is affected by the formation of intermetallic compounds (IMCs), specifically Ni3Sn4 and (Ni,Cu)3Sn4. This paper investigates the mechanical properties of IMCs, which are critical in assessing the longevity of solder joints. First-principles calculations were carried out to investigate the phase stability, mechanical properties and electronic structures of Ni3Sn4, Ni2.5Cu0.5Sn4, Ni2.0Cu1.0Sn4, and Ni1.5Cu1.5Sn4 IMCs. The calculated formation enthalpies show that the doping of Cu atoms leads to a decrease in the stability of the phases and a reduction in the mechanical properties of the Ni3Sn4 crystal structure. As the concentration of Cu atoms in the Ni3Sn4 cells increases, the bulk modulus values of (Ni,Cu)3Sn4 formed with different compositions decrease from 107.78 GPa to 87.84 GPa, the shear modulus decreases from 56.64 GPa to 45.08 GPa, and the elastic modulus decreases from 144.59 GPa to 115.48 GPa, indicating that the doping of Cu atoms into the Ni3Sn4 cells may adversely affect their mechanical properties and increase the possibility of microcracking at the interface during actual service. The anisotropy of (Ni,Cu)3Sn4 is more significant than that of Ni3Sn4, with Ni2.0Cu1.0Sn4 showing the highest anisotropy. After evaluating the electronic structures, the metallic properties of Ni3Sn4 and the Ni2.5Cu0.5Sn4, Ni2.0Cu1.0Sn4, and Ni1.5Cu1.5Sn4 phases are revealed by electronic structure analysis. The total density of states (TDOS) for (Ni,Cu)3Sn4 structures is mainly influenced by Ni-d and Cu-d states. The addition of Cu atoms can increase the brittleness of Ni3Sn4. In addition, the region where d and p hybridisation occurs gradually increases with increasing Cu content. The electronic properties suggest that the binding energy between Ni and Sn atoms weakens with the addition of Cu atoms, resulting in a decrease in the elastic modulus. This research can serve as a valuable reference and theoretical guide for future applications of these materials. Full article
(This article belongs to the Special Issue Advanced Studies in Solder Joints)
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22 pages, 4251 KiB  
Article
A Combined Measurement Method for the Seafloor Positioning, Navigation, and Timing Network
by Jinye Ma and Jianhu Zhao
J. Mar. Sci. Eng. 2022, 10(11), 1664; https://doi.org/10.3390/jmse10111664 - 4 Nov 2022
Cited by 4 | Viewed by 2090
Abstract
The idea of constructing the “GNSS-like” seafloor geodetic network for underwater positioning, navigation, and timing (PNT) has been proposed by many countries. Based on this idea, this paper introduces the principle of the seafloor PNT network and provides a combined measurement method, including [...] Read more.
The idea of constructing the “GNSS-like” seafloor geodetic network for underwater positioning, navigation, and timing (PNT) has been proposed by many countries. Based on this idea, this paper introduces the principle of the seafloor PNT network and provides a combined measurement method, including the absolute positioning and the relative positioning. Experimental results show that the positioning difference between the proposed method and circle-sailing positioning is approximately 10 cm, and the observation efficiency is higher than the existing measurement in the seafloor PNT network. In addition, a model is derived to determine the optimal configuration of the unit network (the basic component of the seafloor PNT network), considering the ranging capability of acoustic beacons, which is helpful to balance the side length of the unit network and the number of observation sessions in the relative positioning. Finally, a chain coordinate transfer strategy in the whole seafloor PNT network is proposed, and the positions where the absolute positioning should be carried out in the whole network are derived based on the conditional adjustment model. Based on this strategy, the design schemes of a seafloor PNT network with centimeter, decimeter, and meter positioning accuracy when the acoustic velocity measuring accuracy is 0.02 m/s and the time measuring accuracy is 10−5 s, are given in the experimental section. Full article
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22 pages, 4155 KiB  
Article
A Game-Theoretic Approach of Optimized Operation of AC/DC Hybrid Microgrid Clusters
by Xuewei Pan, Fan Yang, Peiwen Ma, Yijin Xing, Jinye Zhang and Lingling Cao
Energies 2022, 15(15), 5537; https://doi.org/10.3390/en15155537 - 30 Jul 2022
Cited by 9 | Viewed by 1747
Abstract
To maximize the benefits of microgrid clusters, a general model and analysis method for studying the optimized operation of AC/DC microgrid clusters using non-cooperative games is proposed. This paper first establishes the optimized objective function of an AC/DC microgrid for economic operations. Based [...] Read more.
To maximize the benefits of microgrid clusters, a general model and analysis method for studying the optimized operation of AC/DC microgrid clusters using non-cooperative games is proposed. This paper first establishes the optimized objective function of an AC/DC microgrid for economic operations. Based on the supply and demand theory, the dynamic adjustment mechanism of electricity price is introduced into microgrid clusters, and a game model for the optimal operation of multiple microgrids is established. The Nash equilibrium solution of the established model is obtained by iterative search algorithm, and the convergence of the Nash equilibrium solution is also proven. Finally, the validity and economy of the proposed model are verified by the actual case. Full article
(This article belongs to the Special Issue Advances in Urban Power Distribution System)
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28 pages, 3750 KiB  
Article
Real-Time Underwater Maritime Object Detection in Side-Scan Sonar Images Based on Transformer-YOLOv5
by Yongcan Yu, Jianhu Zhao, Quanhua Gong, Chao Huang, Gen Zheng and Jinye Ma
Remote Sens. 2021, 13(18), 3555; https://doi.org/10.3390/rs13183555 - 7 Sep 2021
Cited by 187 | Viewed by 15864
Abstract
To overcome the shortcomings of the traditional manual detection of underwater targets in side-scan sonar (SSS) images, a real-time automatic target recognition (ATR) method is proposed in this paper. This method consists of image preprocessing, sampling, ATR by integration of the transformer module [...] Read more.
To overcome the shortcomings of the traditional manual detection of underwater targets in side-scan sonar (SSS) images, a real-time automatic target recognition (ATR) method is proposed in this paper. This method consists of image preprocessing, sampling, ATR by integration of the transformer module and YOLOv5s (that is, TR–YOLOv5s), and target localization. By considering the target-sparse and feature-barren characteristics of SSS images, a novel TR–YOLOv5s network and a down-sampling principle are put forward, and the attention mechanism is introduced in the method to meet the requirements of accuracy and efficiency for underwater target recognition. Experiments verified the proposed method achieved 85.6% mean average precision (mAP) and 87.8% macro-F2 score, and brought 12.5% and 10.6% gains compared with the YOLOv5s network trained from scratch, and had the real-time recognition speed of about 0.068 s per image. Full article
(This article belongs to the Special Issue Deep Learning for Radar and Sonar Image Processing)
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12 pages, 2131 KiB  
Article
Ti/RuO2-IrO2-SnO2 Anode for Electrochemical Degradation of Pollutants in Pharmaceutical Wastewater: Optimization and Degradation Performances
by Guozhen Zhang, Xingxing Huang, Jinye Ma, Fuping Wu and Tianhong Zhou
Sustainability 2021, 13(1), 126; https://doi.org/10.3390/su13010126 - 24 Dec 2020
Cited by 26 | Viewed by 4340
Abstract
Electrochemical oxidation technology is an effective technique to treat high-concentration wastewater, which can directly oxidize refractory pollutants into simple inorganic compounds such as H2O and CO2. In this work, two-dimensionally stable anodes, Ti/RuO2-IrO2-SnO2, [...] Read more.
Electrochemical oxidation technology is an effective technique to treat high-concentration wastewater, which can directly oxidize refractory pollutants into simple inorganic compounds such as H2O and CO2. In this work, two-dimensionally stable anodes, Ti/RuO2-IrO2-SnO2, have been developed in order to degrade organic pollutants from pharmaceutical wastewater. Characterization by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray diffraction (XRD) showed that the oxide coating was successfully fabricated on the Ti plate surface. Electrocatalytic oxidation conditions of high concentration pharmaceutical wastewater was discussed and optimized, and the best results showed that the COD removal rate was 95.92% with the energy consumption was 58.09 kW·h/kgCOD under the electrode distance of 3 cm, current density of 8 mA/cm2, initial pH of 2, and air flow of 18 L/min. Full article
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