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Authors = Andrey Kokhanenko

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13 pages, 9545 KiB  
Article
RHEED Study of the Epitaxial Growth of Silicon and Germanium on Highly Oriented Pyrolytic Graphite
by Kirill A. Lozovoy, Vladimir V. Dirko, Olzhas I. Kukenov, Arseniy S. Sokolov, Konstantin V. Krukovskii, Mikhail S. Snegerev, Alexey V. Borisov, Yury V. Kistenev and Andrey P. Kokhanenko
C 2024, 10(2), 36; https://doi.org/10.3390/c10020036 - 10 Apr 2024
Cited by 1 | Viewed by 2733
Abstract
Two-dimensional silicon (silicene) and germanium (germanene) have attracted special attention from researchers in recent years. At the same time, highly oriented pyrolytic graphite (HOPG) and graphene are some of the promising substrates for growing silicene and germanene. However, to date, the processes occurring [...] Read more.
Two-dimensional silicon (silicene) and germanium (germanene) have attracted special attention from researchers in recent years. At the same time, highly oriented pyrolytic graphite (HOPG) and graphene are some of the promising substrates for growing silicene and germanene. However, to date, the processes occurring during the epitaxial growth of silicon and germanium on the surface of such substrates have been poorly studied. In this work, the epitaxial growth of silicon and germanium is studied directly during the process of the molecular beam epitaxy deposition of material onto the HOPG surface by reflection high-energy electron diffraction (RHEED). In addition, the obtained samples are studied by Raman spectroscopy and scanning electron microscopy. A wide range of deposition temperatures from 100 to 800 °C is considered and temperature intervals are determined for various growth modes of silicon and germanium on HOPG. Conditions for amorphous and polycrystalline growth are distinguished. Diffraction spots corresponding to the lattice constants of silicene and germanene are identified that may indicate the presence of areas of graphene-like 2D phases during epitaxial deposition of silicon and germanium onto the surface of highly oriented pyrolytic graphite. Full article
(This article belongs to the Special Issue Advances in Bilayer Graphene)
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14 pages, 3274 KiB  
Article
Two-Photon-Excited FLIM of NAD(P)H and FAD—Metabolic Activity of Fibroblasts for the Diagnostics of Osteoimplant Survival
by Tatiana B. Lepekhina, Viktor V. Nikolaev, Maxim E. Darvin, Hala Zuhayri, Mikhail S. Snegerev, Aleksandr S. Lozhkomoev, Elena I. Senkina, Andrey P. Kokhanenko, Kirill A. Lozovoy and Yury V. Kistenev
Int. J. Mol. Sci. 2024, 25(4), 2257; https://doi.org/10.3390/ijms25042257 - 13 Feb 2024
Cited by 3 | Viewed by 2419
Abstract
Bioinert materials such as the zirconium dioxide and aluminum oxide are widely used in surgery and dentistry due to the absence of cytotoxicity of the materials in relation to the surrounding cells of the body. However, little attention has been paid to the [...] Read more.
Bioinert materials such as the zirconium dioxide and aluminum oxide are widely used in surgery and dentistry due to the absence of cytotoxicity of the materials in relation to the surrounding cells of the body. However, little attention has been paid to the study of metabolic processes occurring at the implant–cell interface. The metabolic activity of mouse 3T3 fibroblasts incubated on yttrium-stabilized zirconium ceramics cured with aluminum oxide (ATZ) and stabilized zirconium ceramics (Y-TZP) was analyzed based on the ratio of the free/bound forms of cofactors NAD(P)H and FAD obtained using two-photon microscopy. The results show that fibroblasts incubated on ceramics demonstrate a shift towards the free form of NAD(P)H, which is observed during the glycolysis process, which, according to our assumptions, is related to the porosity of the surface of ceramic structures. Consequently, despite the high viability and good proliferation of fibroblasts assessed using an MTT test and a scanning electron microscope, the cells are in a state of hypoxia during incubation on ceramic structures. The FLIM results obtained in this work can be used as additional information for scientists who are interested in manufacturing osteoimplants. Full article
(This article belongs to the Special Issue Application of Nanostructures in Biology and Medicine)
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24 pages, 1146 KiB  
Review
Silicon-Based Avalanche Photodiodes: Advancements and Applications in Medical Imaging
by Kirill A. Lozovoy, Rahaf M. H. Douhan, Vladimir V. Dirko, Hazem Deeb, Kristina I. Khomyakova, Olzhas I. Kukenov, Arseniy S. Sokolov, Nataliya Yu. Akimenko and Andrey P. Kokhanenko
Nanomaterials 2023, 13(23), 3078; https://doi.org/10.3390/nano13233078 - 4 Dec 2023
Cited by 17 | Viewed by 6067
Abstract
Avalanche photodiodes have emerged as a promising technology with significant potential for various medical applications. This article presents an overview of the advancements and applications of avalanche photodiodes in the field of medical imaging. Avalanche photodiodes offer distinct advantages over traditional photodetectors, including [...] Read more.
Avalanche photodiodes have emerged as a promising technology with significant potential for various medical applications. This article presents an overview of the advancements and applications of avalanche photodiodes in the field of medical imaging. Avalanche photodiodes offer distinct advantages over traditional photodetectors, including a higher responsivity, faster response times, and superior signal-to-noise ratios. These characteristics make avalanche photodiodes particularly suitable for medical-imaging modalities that require a high detection efficiency, excellent timing resolution, and enhanced spatial resolution. This review explores the key features of avalanche photodiodes, discusses their applications in medical-imaging techniques, and highlights the challenges and future prospects in utilizing avalanche photodiodes for medical purposes. Special attention is paid to the recent progress in silicon-compatible avalanche photodiodes. Full article
(This article belongs to the Special Issue Advanced Nanomaterials in Biomedical Application (2nd Edition))
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15 pages, 2552 KiB  
Article
Dependence of Ge/Si Avalanche Photodiode Performance on the Thickness and Doping Concentration of the Multiplication and Absorption Layers
by Hazem Deeb, Kristina Khomyakova, Andrey Kokhanenko, Rahaf Douhan and Kirill Lozovoy
Inorganics 2023, 11(7), 303; https://doi.org/10.3390/inorganics11070303 - 15 Jul 2023
Cited by 7 | Viewed by 3496
Abstract
In this article, the performance and design considerations of the planar structure of germanium on silicon avalanche photodiodes are presented. The dependences of the breakdown voltage, gain, bandwidth, responsivity, and quantum efficiency on the reverse bias voltage for different doping concentrations and thicknesses [...] Read more.
In this article, the performance and design considerations of the planar structure of germanium on silicon avalanche photodiodes are presented. The dependences of the breakdown voltage, gain, bandwidth, responsivity, and quantum efficiency on the reverse bias voltage for different doping concentrations and thicknesses of the absorption and multiplication layers of germanium on the silicon avalanche photodiode were simulated and analyzed. The study revealed that the gain of the avalanche photodiode is directly proportional to the thickness of the multiplication layer. However, a thicker multiplication layer was also associated with a higher breakdown voltage. The bandwidth of the device, on the other hand, was inversely proportional to the product of the absorption layer thickness and the carrier transit time. A thinner absorption layer offers a higher bandwidth, but it may compromise responsivity and quantum efficiency. In this study, the dependence of the photodetectors’ operating characteristics on the doping concentration used for the multiplication and absorption layers is revealed for the first time. Full article
(This article belongs to the Special Issue Advanced Inorganic Semiconductor Materials)
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17 pages, 2632 KiB  
Review
Recent Advances in Si-Compatible Nanostructured Photodetectors
by Rahaf Douhan, Kirill Lozovoy, Andrey Kokhanenko, Hazem Deeb, Vladimir Dirko and Kristina Khomyakova
Technologies 2023, 11(1), 17; https://doi.org/10.3390/technologies11010017 - 24 Jan 2023
Cited by 17 | Viewed by 4805
Abstract
In this review the latest advances in the field of nanostructured photodetectors are considered, stating the types and materials, and highlighting the features of operation. Special attention is paid to the group-IV material photodetectors, including Ge, Si, Sn, and their solid solutions. Among [...] Read more.
In this review the latest advances in the field of nanostructured photodetectors are considered, stating the types and materials, and highlighting the features of operation. Special attention is paid to the group-IV material photodetectors, including Ge, Si, Sn, and their solid solutions. Among the various designs, photodetectors with quantum wells, quantum dots, and quantum wires are highlighted. Such nanostructures have a number of unique properties, that made them striking to scientists’ attention and device applications. Since silicon is the dominating semiconductor material in the electronic industry over the past decades, and as germanium and tin nanostructures are very compatible with silicon, the combination of these factors makes them the promising candidate to use in future technologies. Full article
(This article belongs to the Section Quantum Technologies)
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12 pages, 24443 KiB  
Article
Peculiarities of the 7 × 7 to 5 × 5 Superstructure Transition during Epitaxial Growth of Germanium on Silicon (111) Surface
by Vladimir V. Dirko, Kirill A. Lozovoy, Andrey P. Kokhanenko, Olzhas I. Kukenov, Alexander G. Korotaev and Alexander V. Voitsekhovskii
Nanomaterials 2023, 13(2), 231; https://doi.org/10.3390/nano13020231 - 4 Jan 2023
Cited by 3 | Viewed by 2232
Abstract
This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × [...] Read more.
This paper presents the results of studying the processes of epitaxial growth of germanium on silicon with crystallographic orientation (111) in a wide temperature range. The temperature dependences of the duration of the transition stage from the 7 × 7 to 5 × 5 superstructure and the values of the critical thickness of the transition from two-dimensional to three-dimensional growth in the range from 250 to 700 °C are determined using the reflection high-energy electron diffraction method. It was shown for the first time that the transition time from the 7 × 7 superstructure to 5 × 5 superstructure depends on the temperature of epitaxial growth. The region of low temperatures of synthesis, which has received insufficient attention so far, is also considered. Full article
(This article belongs to the Special Issue Low-Dimensional Nanomaterials and Their Applications)
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21 pages, 4047 KiB  
Review
Single-Element 2D Materials beyond Graphene: Methods of Epitaxial Synthesis
by Kirill A. Lozovoy, Ihor I. Izhnin, Andrey P. Kokhanenko, Vladimir V. Dirko, Vladimir P. Vinarskiy, Alexander V. Voitsekhovskii, Olena I. Fitsych and Nataliya Yu. Akimenko
Nanomaterials 2022, 12(13), 2221; https://doi.org/10.3390/nano12132221 - 28 Jun 2022
Cited by 35 | Viewed by 4826
Abstract
Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, electrical, magnetic, and optical properties, they promise to revolutionize electronics. The unique properties of [...] Read more.
Today, two-dimensional materials are one of the key research topics for scientists around the world. Interest in 2D materials is not surprising because, thanks to their remarkable mechanical, thermal, electrical, magnetic, and optical properties, they promise to revolutionize electronics. The unique properties of graphene-like 2D materials give them the potential to create completely new types of devices for functional electronics, nanophotonics, and quantum technologies. This paper considers epitaxially grown two-dimensional allotropic modifications of single elements: graphene (C) and its analogs (transgraphenes) borophene (B), aluminene (Al), gallenene (Ga), indiene (In), thallene (Tl), silicene (Si), germanene (Ge), stanene (Sn), plumbene (Pb), phosphorene (P), arsenene (As), antimonene (Sb), bismuthene (Bi), selenene (Se), and tellurene (Te). The emphasis is put on their structural parameters and technological modes in the method of molecular beam epitaxy, which ensure the production of high-quality defect-free single-element two-dimensional structures of a large area for promising device applications. Full article
(This article belongs to the Special Issue Nanotechnologies and Nanomaterials: Selected Papers from CCMR)
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