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H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS

1
Dpto. Ciencia de los Materiales e IM y QI, Facultad de Ciencias, Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain
2
Univ. Grenoble Alpes, CNRS, Grenoble INP*, Institut Néel, 38000 Grenoble, France
3
Dpto. Química-Física, Facultad de Ciencias, Universidad de Cádiz, 11510 Puerto Real (Cádiz), Spain
*
Author to whom correspondence should be addressed.
Surfaces 2020, 3(1), 61-71; https://doi.org/10.3390/surfaces3010007
Received: 2 February 2020 / Revised: 13 February 2020 / Accepted: 14 February 2020 / Published: 18 February 2020
Concerning diamond-based electronic devices, the H-terminated diamond surface is one of the most used terminations as it can be obtained directly by using H2 plasma, which also is a key step for diamond growth by chemical vapour deposition (CVD). The resultant surfaces present a p-type surface conductive layer with interest in power electronic applications. However, the mechanism for this behavior is still under discussion. Upward band bending due to surface transfer doping is the most accepted model, but has not been experimentally probed as of yet. Recently, a downward band bending very near the surface due to shallow acceptors has been proposed to coexist with surface transfer doping, explaining most of the observed phenomena. In this work, a new approach to the measurement of band bending by angle-resolved X-ray photoelectron spectroscopy (ARXPS) is proposed. Based on this new interpretation, a downward band bending of 0.67 eV extended over 0.5 nm was evidenced on a (100) H-terminated diamond surface. View Full-Text
Keywords: H-terminated diamond; surface conductive layer; surface band bending; Angle-resolved X-ray photoelectron spectroscopy H-terminated diamond; surface conductive layer; surface band bending; Angle-resolved X-ray photoelectron spectroscopy
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Alba, G.; Eon, D.; Villar, M.P.; Alcántara, R.; Chicot, G.; Cañas, J.; Letellier, J.; Pernot, J.; Araujo, D. H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS. Surfaces 2020, 3, 61-71.

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