Overview of Rational Design of Binary Alloy for the Synthesis of Two-Dimensional Materials
Abstract
:1. Introduction
2. Synthesis of Graphene on Cu-Ni Alloy
3. Synthesis of h-BN on Binary Alloy
4. Other 2D Materials Grown on Binary Alloy
5. 2D Heterostructures Assembled on a Binary Alloy
6. Conclusions
Author Contributions
Funding
Conflicts of Interest
Abbreviations
2D | Two-dimensional |
h-BN | Hexagonal boron nitride |
TMC | Transition metal carbide |
TMDCs | Transition metal dichalcogenides |
CVD | Chemical vapor deposition |
AFM | Atomic force microscopy |
RMS | Root mean square |
SIMS | Secondary ion mass spectrometry |
BF | Bright field |
LEEM | Low energy electron microscopy |
LPCVD | Low-pressure chemical vapor deposition |
FCC | Face-center cubic |
SEM | Scanning electron microscope |
TEM | Transmission electron microscopy |
HRTEM | High resolution transmission electron microscopy |
SAED | Selected area electron diffraction |
STEM | Scanning transmission electron microscopy |
LEED | Low energy electron diffraction |
FFT | Fast Fourier transform |
AES | Auger electron spectroscopy |
Gr/h-BN | Graphene/hexagonal boron nitride heterostructure |
APCVD | Atmospheric pressure chemical vapor deposition |
References
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Substrate | CVD Route | Material Obtained | Precursors | Growth Temp. (°C) | Growth Time (min) | Domain Size | Thickness | Year | Ref. |
---|---|---|---|---|---|---|---|---|---|
Cu/Ni | APCVD | graphene | CH4 | 750 | 60 | >2 µm | Monolayer | 2019 | [30] |
Cu/Ni | APCVD | graphene | CH4/C2H6 | 1100 | 45 | -- | Monolayer | 2018 | [31] |
Cu/Ni | APCVD | graphene | CH4 | 1050–1100 | 150 | ~4 cm | Monolayer | 2016 | [32] |
Cu/Ni | APCVD | graphene | CH4 | 1075 | 30 | -- | Bilayer | 2016 | [33] |
Cu/Ni | LPCVD (cold-wall) | graphene | CH4 | 930–1030 | 3 | -- | Monolayer-19 nm | 2011 | [34] |
Au/Ni | LPCVD (cold-wall) | graphene | C2H2 | 450 | 7 | >15 µm | Monolayer | 2011 | [73] |
Co/Cu | APCVD | graphene | CH4 | 850–1050 | 5 | -- | 1–4 layers | 2013 | [74] |
Mo/Ni | APCVD | graphene | CH4 | 1000 | 25 | 120 nm | Monolayer | 2013 | [75] |
Cu/Ni | LPCVD | h-BN | H3BNH3 | 1050–1090 | 60 | 70–90 µm | Monolayer | 2015 | [35] |
Cu/Si | LPCVD | h-BN | H2BNH2 | 1035 | 60 | 0.25 mm | Monolayer | 2019 | [36] |
Fe/Si | UHV-CVD (cold-wall) | h-BN | (HBNH)3 | 940 | 5 | 0.33 mm | Monolayer | 2015 | [37] |
Fe/Ni | LPCVD | h-BN | B3H6N3 | 1100 | 30 | -- | 2−5 nm | 2018 | [38] |
Fe2B | APCVD | h-BN | N2 | 1300 | 60 | -- | ~30 nm | 2019 | [39] |
Cu/Mo | APCVD | Mo2C | CH4 | 1092 | 3 | 10 nm | ∼3 nm | 2015 | [43] |
Cu/Mo | APCVD | Mo2C/Gr | CH4 | 1100 | 60 | 100 µm | 170–250 nm | 2017 | [44] |
Au/Mo | APCVD | MoS2 | H2S | 300 | 30 | -- | 1.66 nm | 2014 | [48] |
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Zhu, H.; Zhang, C.; Zhang, X.; Shi, Z.; Wu, T.; Yu, G. Overview of Rational Design of Binary Alloy for the Synthesis of Two-Dimensional Materials. Surfaces 2020, 3, 26-39. https://doi.org/10.3390/surfaces3010003
Zhu H, Zhang C, Zhang X, Shi Z, Wu T, Yu G. Overview of Rational Design of Binary Alloy for the Synthesis of Two-Dimensional Materials. Surfaces. 2020; 3(1):26-39. https://doi.org/10.3390/surfaces3010003
Chicago/Turabian StyleZhu, Hongyan, Chao Zhang, Xuefu Zhang, Zhiyuan Shi, Tianru Wu, and Guanghui Yu. 2020. "Overview of Rational Design of Binary Alloy for the Synthesis of Two-Dimensional Materials" Surfaces 3, no. 1: 26-39. https://doi.org/10.3390/surfaces3010003