Germán-MartÃnez, J.M.; González-Flores, K.E.; Palacios-Márquez, B.; Mendoza-RamÃrez, C.; Moreno, M.; Hernández-MartÃnez, L.; Morales-Sánchez, A.
Analysis of Oxide Capacitance Changes Based on the Formation–Annihilation of Conductive Filaments in a SiO2/Si-NCs/SiO2 Stack Layer-Based MIS-like Capacitor. J. Compos. Sci. 2024, 8, 487.
https://doi.org/10.3390/jcs8120487
AMA Style
Germán-MartÃnez JM, González-Flores KE, Palacios-Márquez B, Mendoza-RamÃrez C, Moreno M, Hernández-MartÃnez L, Morales-Sánchez A.
Analysis of Oxide Capacitance Changes Based on the Formation–Annihilation of Conductive Filaments in a SiO2/Si-NCs/SiO2 Stack Layer-Based MIS-like Capacitor. Journal of Composites Science. 2024; 8(12):487.
https://doi.org/10.3390/jcs8120487
Chicago/Turabian Style
Germán-MartÃnez, J. Miguel, K. E. González-Flores, B. Palacios-Márquez, C. Mendoza-RamÃrez, M. Moreno, L. Hernández-MartÃnez, and A. Morales-Sánchez.
2024. "Analysis of Oxide Capacitance Changes Based on the Formation–Annihilation of Conductive Filaments in a SiO2/Si-NCs/SiO2 Stack Layer-Based MIS-like Capacitor" Journal of Composites Science 8, no. 12: 487.
https://doi.org/10.3390/jcs8120487
APA Style
Germán-MartÃnez, J. M., González-Flores, K. E., Palacios-Márquez, B., Mendoza-RamÃrez, C., Moreno, M., Hernández-MartÃnez, L., & Morales-Sánchez, A.
(2024). Analysis of Oxide Capacitance Changes Based on the Formation–Annihilation of Conductive Filaments in a SiO2/Si-NCs/SiO2 Stack Layer-Based MIS-like Capacitor. Journal of Composites Science, 8(12), 487.
https://doi.org/10.3390/jcs8120487
