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Proceedings 2018, 2(13), 1517; https://doi.org/10.3390/proceedings2131517

Thermoelectric Microsensor Based on Ultrathin Si Films

1
Grup de Nanomaterials i Microsistemes, Departament de Física, Universitat Autònoma de Barcelona, Bellaterra, 08193 Barcelona, Spain
2
Instituto de Microelectrónica de Barcelona—Centre Nacional de Microelectrònica, Campus UAB, Bellaterra, 08193 Barcelona, Spain
Presented at the Eurosensors 2018 Conference, Graz, Austria, 9–12 September 2018.
Present address: IMEC, Kapeldreef 75, 3001 Leuven, Belgium
*
Author to whom correspondence should be addressed.
Published: 7 December 2018
PDF [584 KB, uploaded 7 December 2018]

Abstract

We show the use as a thermal photosensor of a thermoelectric (TE) microsensor based on ultrathin suspended Si films. The reduced thickness of the structural films enhances the extremely large thermal insulation of the sensing area (~43 µW/K), since phonons scatter in the surfaces, and guarantees a reduced thermal mass (in the µJ/K range). The sensitivity of the device is evaluated by heating with an argon laser (λ = 457 nm) in the range 0–10 mW, reaching sensitivities of around 6 × 108 V/(W·m2) in high vacuum conditions and 5 × 107 V/(W·m2) in environments of air at atmospheric pressure. Open circuit voltage measurements with and without light illumination with a 406 nm diode laser operating at 4 mW were conducted at temperature differences up to 50 K between the central hot region and the Si frame. The slight decrease of the Seebeck coefficient is related to the increase of carriers by photogeneration.
Keywords: photosensor; thermoelectric effect and microsensor photosensor; thermoelectric effect and microsensor
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Dalkiranis, G.G.; Ferrando-Villalba, P.; Lopeandía-Fernández, A.; Abad-Muñoz, L.; Rodriguez-Viejo, J. Thermoelectric Microsensor Based on Ultrathin Si Films. Proceedings 2018, 2, 1517.

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