Thermoelectric Microsensor Based on Ultrathin Si Films†
AbstractWe show the use as a thermal photosensor of a thermoelectric (TE) microsensor based on ultrathin suspended Si films. The reduced thickness of the structural films enhances the extremely large thermal insulation of the sensing area (~43 µW/K), since phonons scatter in the surfaces, and guarantees a reduced thermal mass (in the µJ/K range). The sensitivity of the device is evaluated by heating with an argon laser (λ = 457 nm) in the range 0–10 mW, reaching sensitivities of around 6 × 108 V/(W·m2) in high vacuum conditions and 5 × 107 V/(W·m2) in environments of air at atmospheric pressure. Open circuit voltage measurements with and without light illumination with a 406 nm diode laser operating at 4 mW were conducted at temperature differences up to 50 K between the central hot region and the Si frame. The slight decrease of the Seebeck coefficient is related to the increase of carriers by photogeneration.
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Dalkiranis, G.G.; Ferrando-Villalba, P.; Lopeandía-Fernández, A.; Abad-Muñoz, L.; Rodriguez-Viejo, J. Thermoelectric Microsensor Based on Ultrathin Si Films. Proceedings 2018, 2, 1517.
Dalkiranis GG, Ferrando-Villalba P, Lopeandía-Fernández A, Abad-Muñoz L, Rodriguez-Viejo J. Thermoelectric Microsensor Based on Ultrathin Si Films. Proceedings. 2018; 2(13):1517.Chicago/Turabian Style
Dalkiranis, Gustavo Gonçalves; Ferrando-Villalba, Pablo ; Lopeandía-Fernández, Aitor; Abad-Muñoz, Llibertat; Rodriguez-Viejo, Javier. 2018. "Thermoelectric Microsensor Based on Ultrathin Si Films." Proceedings 2, no. 13: 1517.
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