Passivation of MWIR Heterostructure p-InAsSbP/n-InAs Photodiodes Using SiO2 Layers for Near-Room-Temperature Operation †
Abstract
1. Introduction
2. Materials and Methods
3. Results
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Pawluczyk, J.; Kłos, K.; Ślęzak, O.; Majkowycz, K.; Murawski, K.; Manyk, T.; Rutkowski, J.; Martyniuk, P. Passivation of MWIR Heterostructure p-InAsSbP/n-InAs Photodiodes Using SiO2 Layers for Near-Room-Temperature Operation. Proceedings 2025, 129, 13. https://doi.org/10.3390/proceedings2025129013
Pawluczyk J, Kłos K, Ślęzak O, Majkowycz K, Murawski K, Manyk T, Rutkowski J, Martyniuk P. Passivation of MWIR Heterostructure p-InAsSbP/n-InAs Photodiodes Using SiO2 Layers for Near-Room-Temperature Operation. Proceedings. 2025; 129(1):13. https://doi.org/10.3390/proceedings2025129013
Chicago/Turabian StylePawluczyk, Jarosław, Krzysztof Kłos, Oskar Ślęzak, Kinga Majkowycz, Krzysztof Murawski, Tetiana Manyk, Jarosław Rutkowski, and Piotr Martyniuk. 2025. "Passivation of MWIR Heterostructure p-InAsSbP/n-InAs Photodiodes Using SiO2 Layers for Near-Room-Temperature Operation" Proceedings 129, no. 1: 13. https://doi.org/10.3390/proceedings2025129013
APA StylePawluczyk, J., Kłos, K., Ślęzak, O., Majkowycz, K., Murawski, K., Manyk, T., Rutkowski, J., & Martyniuk, P. (2025). Passivation of MWIR Heterostructure p-InAsSbP/n-InAs Photodiodes Using SiO2 Layers for Near-Room-Temperature Operation. Proceedings, 129(1), 13. https://doi.org/10.3390/proceedings2025129013