Pawluczyk, J.; Kłos, K.; Ślęzak, O.; Majkowycz, K.; Murawski, K.; Manyk, T.; Rutkowski, J.; Martyniuk, P.
Passivation of MWIR Heterostructure p-InAsSbP/n-InAs Photodiodes Using SiO2 Layers for Near-Room-Temperature Operation. Proceedings 2025, 129, 13.
https://doi.org/10.3390/proceedings2025129013
AMA Style
Pawluczyk J, Kłos K, Ślęzak O, Majkowycz K, Murawski K, Manyk T, Rutkowski J, Martyniuk P.
Passivation of MWIR Heterostructure p-InAsSbP/n-InAs Photodiodes Using SiO2 Layers for Near-Room-Temperature Operation. Proceedings. 2025; 129(1):13.
https://doi.org/10.3390/proceedings2025129013
Chicago/Turabian Style
Pawluczyk, Jarosław, Krzysztof Kłos, Oskar Ślęzak, Kinga Majkowycz, Krzysztof Murawski, Tetiana Manyk, Jarosław Rutkowski, and Piotr Martyniuk.
2025. "Passivation of MWIR Heterostructure p-InAsSbP/n-InAs Photodiodes Using SiO2 Layers for Near-Room-Temperature Operation" Proceedings 129, no. 1: 13.
https://doi.org/10.3390/proceedings2025129013
APA Style
Pawluczyk, J., Kłos, K., Ślęzak, O., Majkowycz, K., Murawski, K., Manyk, T., Rutkowski, J., & Martyniuk, P.
(2025). Passivation of MWIR Heterostructure p-InAsSbP/n-InAs Photodiodes Using SiO2 Layers for Near-Room-Temperature Operation. Proceedings, 129(1), 13.
https://doi.org/10.3390/proceedings2025129013
