Magnetic Sensors Based on AMR Effect in LSMO Thin Films†
AbstractIn this paper, the potentialities of the manganese oxide compound La0.7Sr0.3MnO3 (LSMO) for the realization of sensitive room temperature magnetoresistive sensors are discussed. LSMO films deposited on various types of substrates having different magnetic anisotropies were patterned to form rectangular stripes of width 100 µm and length 300 µm. It is shown that, apart from the well-known colossal magnetoresistance contribution, the anisotropic magnetoresistance effects can be used to exhibit competitive performance at room temperature benefiting from the very low noise of LSMO thin films.
Share & Cite This Article
Rousseau, O.; Flament, S.; Guillet, B.; Sing, M.L.C.; Méchin, L. Magnetic Sensors Based on AMR Effect in LSMO Thin Films. Proceedings 2017, 1, 635.
Rousseau O, Flament S, Guillet B, Sing MLC, Méchin L. Magnetic Sensors Based on AMR Effect in LSMO Thin Films. Proceedings. 2017; 1(4):635.Chicago/Turabian Style
Rousseau, Olivier; Flament, Stéphane; Guillet, Bruno; Sing, Marc Lam Chok; Méchin, Laurence. 2017. "Magnetic Sensors Based on AMR Effect in LSMO Thin Films." Proceedings 1, no. 4: 635.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.