Next Article in Journal
Design and Development of a Nearable Wireless System to Control Indoor Air Quality and Indoor Lighting Quality
Previous Article in Journal
Iterative Learning for Human Activity Recognition from Wearable Sensor Data
Article Menu
Issue 2 (ECSA-3 2016) cover image

Article Versions

Export Article

Open AccessProceedings
Proceedings 2017, 1(2), 8;

Performance of TAHOS Device as Nonvolatile TID Radiation Sensor

Electronic Engineering Department, Southern Taiwan University of Science and Technology, 1, Nan-Tai Street, Yungkang District, Tainan 71005, Taiwan
Department of Opto-Electronic System Engineering, Minghsin University of Science and Technology, Xinxing Rd, 1, Xinfeng 30401, Taiwan
Presented at the 3rd International Electronic Conference on Sensors and Applications, 15–30 November 2016; Available online:
Author to whom correspondence should be addressed.
Published: 14 November 2016
PDF [517 KB, uploaded 26 June 2017]


The titanium nitride–aluminum oxide–hafnium oxide–silicon oxide–silicon device using aluminum oxide as charge-blocking layer (hereafter TAHOS) could be a candidate for nonvolatile total ionization dose (TID) radiation sensor. In this paper, gamma radiation induces a significant decrease in the threshold voltage VT of TAHOS and the radiation-induced VT decrease on TAHOS is nearly 1.3 times of that on a standard titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon device (hereafter TOHOS) device after 5 Mrad TID gamma irradiation. The change in VT of TAHOS after gamma irradiation also has a strong correlation to TID up to 5 Mrad gamma irradiation. Moreover, the VT 10yrs retention characteristic of TAHOS device can be markedly improved and is nearly 13% better than that of a standard TOHOS device after 5 Mrad gamma irradiation. Therefore, the TAHOS device in this study has demonstrated the possibility using TAHOS for high TID response and good TID data retention for non-volatile TID radiation sensing.
Keywords: high k; sensor; radiation; SONOS; SOHOS; MOS; TID high k; sensor; radiation; SONOS; SOHOS; MOS; TID
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Jong, F.-C.; Hsieh, W.-C. Performance of TAHOS Device as Nonvolatile TID Radiation Sensor. Proceedings 2017, 1, 8.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Metrics

Article Access Statistics



[Return to top]
Proceedings EISSN 2504-3900 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top