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Charge Transport and Electrical Properties of Spin Crossover Materials: Towards Nanoelectronic and Spintronic Devices

1
LCC, CNRS & Université de Toulouse (UPS, INP), 205 route de Narbonne, Toulouse 31077, France
2
Faculty of Electrical Engineering and Computer, Stefan cel Mare University of Suceava, Str. Universitatii nr. 13, Suceava 720229, Romania
3
Institut Carnot-CIRIMAT, Université de Toulouse, 118 route de Narbonne, Toulouse 31062, France
*
Author to whom correspondence should be addressed.
These authors contributed equally to this work.
Academic Editors: Guillem Aromí and José Antonio Real
Magnetochemistry 2016, 2(1), 18; https://doi.org/10.3390/magnetochemistry2010018
Received: 23 November 2015 / Revised: 22 February 2016 / Accepted: 29 February 2016 / Published: 11 March 2016
(This article belongs to the Special Issue Spin Crossover (SCO) Research)
In this paper, we present a comprehensive review of research on electrical and charge transport properties of spin crossover complexes. This includes both the effect of spin-state switching on the dielectric permittivity and electrical conductivity of the material and vice versa the influence of an applied electrical field (or current) on the spin-state of the system. The survey covers different size scales from bulk materials and thin films to nanoparticles and single molecules and embraces the presentation of several device prototypes and hybrid materials as well. View Full-Text
Keywords: charge transport; dielectric permittivity; electronic device; spin crossover charge transport; dielectric permittivity; electronic device; spin crossover
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MDPI and ACS Style

Lefter, C.; Davesne, V.; Salmon, L.; Molnár, G.; Demont, P.; Rotaru, A.; Bousseksou, A. Charge Transport and Electrical Properties of Spin Crossover Materials: Towards Nanoelectronic and Spintronic Devices. Magnetochemistry 2016, 2, 18.

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