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Journal: Inorganics, 2024
Volume: 12
Number: 60
60
Article: Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe₂ Channel with Direct-Contact HfO₂ Gate Dielectrics
Authors: by Jie Lu, Zeyang Xiang, Kexiang Wang, Mengrui Shi, Liuxuan Wu, Fuyu Yan, Ranping Li, Zixuan Wang, Huilin Jin and Ran Jiang
Link: https://www.mdpi.com/2304-6740/12/2/60

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