Lu, J.; Xiang, Z.; Wang, K.; Shi, M.; Wu, L.; Yan, F.; Li, R.; Wang, Z.; Jin, H.; Jiang, R.
Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics. Inorganics 2024, 12, 60.
https://doi.org/10.3390/inorganics12020060
AMA Style
Lu J, Xiang Z, Wang K, Shi M, Wu L, Yan F, Li R, Wang Z, Jin H, Jiang R.
Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics. Inorganics. 2024; 12(2):60.
https://doi.org/10.3390/inorganics12020060
Chicago/Turabian Style
Lu, Jie, Zeyang Xiang, Kexiang Wang, Mengrui Shi, Liuxuan Wu, Fuyu Yan, Ranping Li, Zixuan Wang, Huilin Jin, and Ran Jiang.
2024. "Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics" Inorganics 12, no. 2: 60.
https://doi.org/10.3390/inorganics12020060
APA Style
Lu, J., Xiang, Z., Wang, K., Shi, M., Wu, L., Yan, F., Li, R., Wang, Z., Jin, H., & Jiang, R.
(2024). Bipolar Plasticity in Synaptic Transistors: Utilizing HfSe2 Channel with Direct-Contact HfO2 Gate Dielectrics. Inorganics, 12(2), 60.
https://doi.org/10.3390/inorganics12020060