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Photonics 2018, 5(4), 32; https://doi.org/10.3390/photonics5040032

Mid-Infrared Photonic-Crystal Surface-Emitting Lasers with InGaAs/GaAsSb ‘W’-Type Quantum Wells Grown on InP Substrate

Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu City 30010, Taiwan
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Received: 10 September 2018 / Revised: 28 September 2018 / Accepted: 30 September 2018 / Published: 2 October 2018
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Abstract

InP-based InGaAs/GaAsSb ‘W’-type quantum well (QW) photonic-crystal (PC) surface- emitting lasers (SELs) of 2.2 μm wavelength range are fabricated and room-temperature lasing emissions by optical pumping are demonstrated for the first time. Photonic-crystal surface-emitting laser (PCSEL) devices are investigated in terms of PC parameters of etch depth, lattice period, and filling factor. The lasing emissions cover wavelengths from 2182 nm to 2253 nm. The temperature-dependent lasing characteristics are also studied in terms of lattice period. All PCSELs show consistent lasing wavelength shift against temperature at a rate of 0.17 nm/K. The characteristic temperatures of PCSELs are extracted and discussed with respect to wavelength detuning between QW gain peak and PC cavity resonance. View Full-Text
Keywords: photonic crystals; surface-emitting lasers; mid-infrared lasers; quantum wells photonic crystals; surface-emitting lasers; mid-infrared lasers; quantum wells
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Li, Z.-L.; Kang, Y.-C.; Lin, G.; Lee, C.-P. Mid-Infrared Photonic-Crystal Surface-Emitting Lasers with InGaAs/GaAsSb ‘W’-Type Quantum Wells Grown on InP Substrate. Photonics 2018, 5, 32.

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