Cascade Type-I Quantum Well GaSb-Based Diode Lasers
AbstractCascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Coated devices with an ~100-μm-wide aperture and a 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at 17–20 °C—a nearly or more than twofold increase compared to previous state-of-the-art diode lasers. The utilization of the different quantum wells in the cascade laser heterostructure was demonstrated to yield wide gain lasers, as often desired for tunable laser spectroscopy. Double-step etching was utilized to minimize both the internal optical loss and the lateral current spreading penalties in narrow-ridge lasers. Narrow-ridge cascade diode lasers operate in a CW regime with ~100 mW of output power near and above 3 μm and above 150 mW near 2 μm. View Full-Text
Share & Cite This Article
Shterengas, L.; Kipshidze, G.; Hosoda, T.; Wang, M.; Feng, T.; Belenky, G. Cascade Type-I Quantum Well GaSb-Based Diode Lasers. Photonics 2016, 3, 27.
Shterengas L, Kipshidze G, Hosoda T, Wang M, Feng T, Belenky G. Cascade Type-I Quantum Well GaSb-Based Diode Lasers. Photonics. 2016; 3(2):27.Chicago/Turabian Style
Shterengas, Leon; Kipshidze, Gela; Hosoda, Takashi; Wang, Meng; Feng, Tao; Belenky, Gregory. 2016. "Cascade Type-I Quantum Well GaSb-Based Diode Lasers." Photonics 3, no. 2: 27.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.