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Open AccessArticle

Cascade Type-I Quantum Well GaSb-Based Diode Lasers

Department of Electrical and Computer Engineering, State University of New York at Stony Brook, Stony Brook, NY 11794, USA
Author to whom correspondence should be addressed.
Photonics 2016, 3(2), 27;
Received: 7 April 2016 / Revised: 2 May 2016 / Accepted: 4 May 2016 / Published: 11 May 2016
(This article belongs to the Special Issue Quantum Cascade Lasers - Advances and New Applications)
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Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Coated devices with an ~100-μm-wide aperture and a 3-mm-long cavity demonstrated continuous wave (CW) output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at 17–20 °C—a nearly or more than twofold increase compared to previous state-of-the-art diode lasers. The utilization of the different quantum wells in the cascade laser heterostructure was demonstrated to yield wide gain lasers, as often desired for tunable laser spectroscopy. Double-step etching was utilized to minimize both the internal optical loss and the lateral current spreading penalties in narrow-ridge lasers. Narrow-ridge cascade diode lasers operate in a CW regime with ~100 mW of output power near and above 3 μm and above 150 mW near 2 μm. View Full-Text
Keywords: high power; mid-infrared; diode laser; antimonide; type-I quantum well; cascade high power; mid-infrared; diode laser; antimonide; type-I quantum well; cascade

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Shterengas, L.; Kipshidze, G.; Hosoda, T.; Wang, M.; Feng, T.; Belenky, G. Cascade Type-I Quantum Well GaSb-Based Diode Lasers. Photonics 2016, 3, 27.

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