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Open AccessArticle

Material Exchange Property of Organo Lead Halide Perovskite with Hole-Transporting Materials

Department of Materials and Synchrotron Radiation Engineering, Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji, Hyogo, 671-2201, Japan
Energy Technology Laboratories, Osaka Gas Co., Ltd., Osaka 554-0051, Japan
Department of Molecular Engineering, Graduate School of Engineering, Kyoto University, Kyoto 615-8510, Japan
Institute for Integrated Cell-Material Sciences (WPI-iCeMS), Kyoto University, Kyoto 615-8510, Japan 
Author to whom correspondence should be addressed.
Photonics 2015, 2(4), 1043-1053;
Received: 4 September 2015 / Revised: 24 September 2015 / Accepted: 28 September 2015 / Published: 2 October 2015
(This article belongs to the Special Issue Perovskite Photovoltaic and Optoelectronics)
PDF [783 KB, uploaded 2 October 2015]


Using X-ray diffraction (XRD), it was confirmed that the deposition of hole-transporting materials (HTM) on a CH3NH3PbI3 perovskite layer changed the CH3NH3PbI3 perovskite crystal, which was due to the material exchanging phenomena between the CH3NH3PbI3 perovskite and HTM layers. The solvent for HTM also changed the perovskite crystal. In order to suppress the crystal change, doping by chloride ion, bromide ion and 5-aminovaleric acid was attempted. However, the doping was unable to stabilize the perovskite crystal against HTM deposition. It can be concluded that the CH3NH3PbI3 perovskite crystal is too soft and flexible to stabilize against HTM deposition. View Full-Text
Keywords: CuSCN, cupper thiocyanate, inter diffusion, stability, material exchanging CuSCN, cupper thiocyanate, inter diffusion, stability, material exchanging

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Ito, S.; Kanaya, S.; Nishino, H.; Umeyama, T.; Imahori, H. Material Exchange Property of Organo Lead Halide Perovskite with Hole-Transporting Materials. Photonics 2015, 2, 1043-1053.

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