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Volume 12
Issue 11
10.3390/photonics12111129
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Communication

High-Modulation-Efficiency Lithium Niobate Electro-Optic Modulator Based on Sunken Dual-Layer Electrode

by
Yicheng Huang
1,
Qing Liao
1,
Yihui Yin
2,
Zanhui Chen
1,
Fabi Zhang
1,
Tangyou Sun
1,
Haiou Li
1,* and
Meihua Shou
1,*
1
Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
2
The 34th Research Institute of China Electronics Technology Group Corporation, Guilin 541004, China
*
Authors to whom correspondence should be addressed.
Photonics 2025, 12(11), 1129; https://doi.org/10.3390/photonics12111129
Submission received: 16 October 2025 / Revised: 5 November 2025 / Accepted: 13 November 2025 / Published: 14 November 2025
(This article belongs to the Section Optical Communication and Network)
Versions Notes

Abstract

Electro-optic modulators with high bandwidth, high modulation efficiency, and low loss play a crucial role in many fields, such as artificial intelligence, analog communications, and satellite data links. The modulation efficiency and loss, which are related to the chip size and integration, are important parameters for modulators. However, the modulation efficiency and optical loss of electro-optic modulators are interrelated in general. In this study, an improved scheme combining sunken electrodes and dual-layer capacitance-loaded electrodes is exhibited, improving the constraint between the modulation efficiency and optical loss of thin-film lithium niobate electro-optic modulators by enhancing the electric field effect. An electro-optic modulator with a high bandwidth (>60 GHz), low optical loss (0.14 dB/cm), and low half-wave voltage–length product (1.52 V·cm) has been realized using finite element analysis software.
Keywords: thin-film lithium niobate; high modulation efficiency; low loss; sunken electrodes; optical chips thin-film lithium niobate; high modulation efficiency; low loss; sunken electrodes; optical chips

Share and Cite

MDPI and ACS Style

Huang, Y.; Liao, Q.; Yin, Y.; Chen, Z.; Zhang, F.; Sun, T.; Li, H.; Shou, M. High-Modulation-Efficiency Lithium Niobate Electro-Optic Modulator Based on Sunken Dual-Layer Electrode. Photonics 2025, 12, 1129. https://doi.org/10.3390/photonics12111129

AMA Style

Huang Y, Liao Q, Yin Y, Chen Z, Zhang F, Sun T, Li H, Shou M. High-Modulation-Efficiency Lithium Niobate Electro-Optic Modulator Based on Sunken Dual-Layer Electrode. Photonics. 2025; 12(11):1129. https://doi.org/10.3390/photonics12111129

Chicago/Turabian Style

Huang, Yicheng, Qing Liao, Yihui Yin, Zanhui Chen, Fabi Zhang, Tangyou Sun, Haiou Li, and Meihua Shou. 2025. "High-Modulation-Efficiency Lithium Niobate Electro-Optic Modulator Based on Sunken Dual-Layer Electrode" Photonics 12, no. 11: 1129. https://doi.org/10.3390/photonics12111129

APA Style

Huang, Y., Liao, Q., Yin, Y., Chen, Z., Zhang, F., Sun, T., Li, H., & Shou, M. (2025). High-Modulation-Efficiency Lithium Niobate Electro-Optic Modulator Based on Sunken Dual-Layer Electrode. Photonics, 12(11), 1129. https://doi.org/10.3390/photonics12111129

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