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Journal: Processes, 2021
Volume: 9
Number: 1975
Article:
Equivalent Circuit Establishments of a GaN High-Electron-Mobility Transistor and 635 nm Laser Diode for a Short-Pulsed Rising Current Simulation
Authors:
by
Kai-Jun Pai and Chang-Hua Lin
Link:
https://www.mdpi.com/2227-9717/9/11/1975
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