Next Article in Journal
Unconventional GVNS for Solving the Garbage Collection Problem with Time Windows
Previous Article in Journal
Advanced Solutions Aimed at the Monitoring of Falls and Human Activities for the Elderly Population
Open AccessArticle

Doherty Power Amplifier for LTE-Advanced Systems

1
SARAS Technology Limited, Leeds LS12 4NQ, UK
2
School of Electrical Engineering and Computer Science, Faculty of Engineering and Informatics, University of Bradford, Bradford BD7 1DP, UK
3
Computer Systems Department, Ninevah Technical Institute, Northern Technical University, Mosul 41001, Iraq
*
Authors to whom correspondence should be addressed.
Technologies 2019, 7(3), 60; https://doi.org/10.3390/technologies7030060
Received: 3 July 2019 / Revised: 15 August 2019 / Accepted: 20 August 2019 / Published: 22 August 2019
The design and implementation of an asymmetrical Doherty power amplifier are discussed, where two Cree GaN High Electron Mobility Transistors (HEMTs) devices are used for designing an asymmetrical Doherty power amplifier to achieve saturated power of 48 dBm and optimal back-off efficiency of 8 dB in the frequency band of 3.3–3.5 GHz. Rogers RO4350B material is used as a substrate material, a back-off of 8 dB was achieved with an average gain of 10 dB. Load-pull data are an important tool for determining the optimum load impedance that the transistor needs to see. Additionally, the measured efficiency was 50% when the designed amplifier was tested by a modulated signal of 8 dB peak-to-average-power ratio when the average output power was 40 dBm. At the same time, the linearity of the designed amplifier was measured and found 31.8 dB which can be improved using a digital pre-distorter. The gain phase measurement can be used as an indicator for compensating the phase difference between the two cells. View Full-Text
Keywords: Doherty power amplifier; LTE-Advanced; back-off power; linearity; efficiency; impedance inverter network Doherty power amplifier; LTE-Advanced; back-off power; linearity; efficiency; impedance inverter network
Show Figures

Figure 1

MDPI and ACS Style

Abdulkhaleq, A.M.; Yahya, M.A.; Al-Yasir, Y.I.A.; Ojaroudi Parchin, N.; McEwan, N.; Rayit, A.; Abd-Alhameed, R.A.; Noras, J. Doherty Power Amplifier for LTE-Advanced Systems. Technologies 2019, 7, 60.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop